Unlock instant, AI-driven research and patent intelligence for your innovation.

Treatment solution and treatment method for polycrystalline silicon carbon head material

A treatment method, polysilicon carbon technology, applied in liquid cleaning methods, chemical instruments and methods, cleaning methods and utensils, etc., can solve the large consumption of silicon material, the difficulty of polysilicon carbon head material processing, and the removal effect of carbon head material To reduce the loss of silicon materials, realize the separation of silicon and carbon, and improve product quality

Inactive Publication Date: 2019-05-31
内蒙古通威高纯晶硅有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silicon and carbon are elements of the same group, and have many similar physical and chemical properties, which makes it difficult to handle polysilicon carbon heads
At present, some domestic and foreign enterprises adopt the most primitive method, that is, manual sorting by hammering. This method consumes a lot of silicon material and has poor removal effect of carbon head material.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~3

[0029] A treatment solution for polysilicon carbon headstock, characterized in that, said treatment solution is made up of concentrated nitric acid, concentrated sulfuric acid, potassium permanganate and sodium chlorate; the weight of concentrated nitric acid, concentrated sulfuric acid, potassium permanganate and sodium chlorate See Table 1 for comparison.

[0030] The processing method of the polysilicon carbon head material adopting above-mentioned processing solution comprises:

[0031] The automatic acid supply machine transports the treatment solution to the pickling tank of the silicon cleaning machine;

[0032] Soaking the polycrystalline carbon head stock in the treatment solution in the pickling tank;

[0033] Use pure water to rinse in the pure water submersible tank of the silicon material cleaning machine;

[0034] Ultrasonic cleaning is carried out in the ultrasonic cleaning tank of the silicon material cleaning machine;

[0035] The silicon material cleaning ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a treatment solution and a treatment method for a polycrystalline silicon carbon head material, which can rapidly and effectively treat polycrystalline silicon carbon head material, realize silicon-carbon separation, reduce silicon material loss and reduce production cost; the treatment solution is composed of concentrated nitric acid, concentrated sulfuric acid, potassiumpermanganate and sodium chlorate; the processing method comprises the following steps of: (1) putting the polycrystalline silicon carbon head material into a treatment solution for soaking; (2) deacidification and cleaning; (3) ultrasonic cleaning; and (4) dehydrating and drying.

Description

technical field [0001] The invention relates to the technical field of polysilicon surface treatment, in particular to a treatment solution and a treatment method for polysilicon carbon head material. Background technique [0002] Polysilicon is the main raw material for the production of solar photovoltaic products, and one of the main processes of the Siemens method used is chemical reduction vapor deposition. This method is a process in which the multi-stage rectified trichlorosilane gas reacts with hydrogen to form silicon at a high temperature of 1100°C and is continuously deposited on the initial silicon core to grow into a silicon rod. The core or silicon rod itself maintains heat, so the silicon rods in the reduction deposition furnace are conducted in pairs, forming an inverted "U" shape. The conductive electrodes directly in contact with the silicon rods require high temperature resistance and do not pollute the silicon material. Therefore, graphite electrodes wit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B08B3/08B08B3/12
Inventor 张川川甘居富游书华彭中王亚萍
Owner 内蒙古通威高纯晶硅有限公司