Device and method for removing silica film from surface of silicon chip

Abstract

The invention provides a device and method for removing a silica film from the surface of a silicon chip, and belongs to the field of semiconductor test equipment. The device comprises a hydrofluoricacid solvent bottle, a hybrid gas box, an atomizer and a reaction box, the hydrofluoric acid solvent bottle is communicated with an inlet of the atomizer via a first pipe, an outlet of the atomizer isarranged inside the hybrid gas box, the atomizer and the hybrid gas box are arranged in a sealed way, the upper end of the hydrofluoric acid solvent bottle is provided with an air inlet pipe communicated to the internal of the bottle, the air inlet pipe is communicated with an external nitrogen supply device, and communicated with the hybrid gas box via a second pipe, the hybrid gas box is connected with the reaction box via a third pipe, the third pipe is provided with a hybrid gas switch, and the reaction box is provided with an air outlet. Via the device and method, the silica film can beremoved without polluting the silicon chip itself, an inductive coupling plasma mass spectrometer can be used to analyze metal ions in the SiO2 film quantitatively, and metal can be monitored effectively in the back-seal technology.

Description

technical field [0001] The invention belongs to the field of semiconductor testing equipment, and relates to a device and a method for removing a silicon dioxide film on the surface of a silicon wafer. Background technique [0002] The technology commonly used in the semiconductor industry to remove the SiO2 film on the surface of the silicon wafer is to immerse the entire silicon wafer in an aqueous solution of high-concentration hydrogen fluoride gas to remove it. This treatment method has the following two problems. One is that with the development of the semiconductor industry , the metal ions in the SiO2 film on the back will also affect the semiconductor components and cause the risk of leakage, but the existing technology cannot test the metal ion content in SiO2 for quantitative analysis, and cannot effectively monitor the metal in the back-sealing process. While removing the SiO2 film, the silicon wafer itself has been contaminated. Contents of the invention [0...

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Problems solved by technology

[0002] The technology commonly used in the semiconductor industry to remove the SiO2 film on the surface of the silicon wafer is to immerse the entire silicon wafer in an aqueous solution of high-concentration hydrogen fluoride gas to remove it. This treatment method has the following two problems. One is that with the development of the semiconductor industry , the metal ions in the SiO2 film on the back will also affect the semiconductor components and cause the risk of leakage, but the existing technology cannot test the metal ion content in SiO2 for quantitative analysis, and cannot effectively monitor the metal in the back-sealing process. While removing the SiO2 film, the silicon wafer itself has been contaminated

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