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Wafers, manufacturing method thereof and electronic device

A manufacturing method and technology for electronic devices, which are applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., and can solve problems such as device performance impact

Inactive Publication Date: 2019-06-04
ZING SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Another issue that has arisen in the semiconductor industry is the impact of hot carrier effects on device performance
This is especially worrisome on smaller devices, since a proportionally larger voltage is used

Method used

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  • Wafers, manufacturing method thereof and electronic device
  • Wafers, manufacturing method thereof and electronic device
  • Wafers, manufacturing method thereof and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] In order to solve the aforementioned technical problems and improve the performance of the device, a method for manufacturing a wafer is provided in an embodiment of the present invention, such as figure 1 Said, said method mainly comprises:

[0045]Step S1: providing a silicon ingot;

[0046] Step S2: Slicing the silicon crystal ingot;

[0047] Step S3: After the slicing, perform a first annealing step and a second annealing step in sequence.

[0048] According to the wafer manufacturing method of the present invention, after wafer slicing, the wafer is placed in an annealing process comprising a two-step deuteration process to form a deuterium passivation layer, further reduce the roughness of the wafer surface, and obtain uniform volume micro-defects (Bulk Micro Defect, BMD) distribution. The temperature of the first annealing step of the wafer is controlled to be lower than the temperature of the second annealing step. Additional deuterium atoms are introduced a...

Embodiment 2

[0097] In order to solve the aforementioned technical problems and improve the performance of the device, another embodiment of the present invention provides a method for manufacturing a wafer, such as figure 2 Said, said method mainly comprises:

[0098] Step S1: providing a silicon ingot;

[0099] Step S2: performing the first annealing step and the second annealing step in sequence before the slicing;

[0100] Step S3: slice the silicon crystal ingot.

[0101] According to the wafer manufacturing method of the present invention, before slicing and polishing at least the nitrogen-doped single crystal silicon, the single crystal silicon is subjected to a high-temperature treatment of 1100° C. to 1380° C. in an atmosphere of argon and / or deuterium. Before the high temperature treatment of the wafer, the temperature of the wafer is kept lower than the temperature of the high temperature heat treatment to allow the growth of oxygen precipitation nuclei, so that annihilation ...

Embodiment 3

[0151] The present invention also provides a wafer, which is prepared by the method described in Embodiment 1 or Embodiment 2. In the present invention, the variation of the BMD density of the silicon wafer obtained after cutting in different regions is reduced, and the doping of nitrogen Concentrations are no longer adversely affected.

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Abstract

The invention provides wafers, a manufacturing method thereof, and an electronic device. The method comprises a step of providing a silicon ingot and performing slicing to obtain the wafers, and a step of performing a first annealing step and a second annealing step sequentially before or after the slicing, wherein the temperature of the first annealing step is lower than the temperature of the second annealing step. According to the method for manufacturing the wafers of the present invention, the first annealing step and the second annealing step are sequentially performed before or after the silicon ingot is cut, and the temperature of the first annealing step is lower than the temperature of the second annealing step. Through the above treatment, the change in the BMD densities of silicon wafers obtained after cutting different regions of a nitrogen-doped silicon crystal is reduced, and the doping concentration of nitrogen does not cause an adverse effect.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wafer, a manufacturing method thereof, and an electronic device. Background technique [0002] Monocrystalline silicon is the starting material for most processes in the manufacture of semiconductor electronic components and is usually produced by the so-called Czochralski (CZ) method. [0003] The continuous shrinking of modern microelectronic devices poses greater challenges and limitations to the quality of silicon substrates, which are essentially determined by the size and distribution of micro-defects. Most of the micro-defects formed in silicon crystals formed by Czochralski process and Float Zone (FZ) process are the accumulation of intrinsic point defects such as silicon vacancies and self-interstitials. [0004] In the manufacturing process of semiconductor devices, hydrogen passivation has become a well-known and routine process. During hydrogen passivation,...

Claims

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Application Information

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IPC IPC(8): H01L21/324
Inventor 肖德元
Owner ZING SEMICON CORP