A light emitting diode and a manufacturing method thereof

A technology of light-emitting diodes and light-emitting layers, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as current congestion and low carrier mobility, increase adhesion, reduce light absorption efficiency, and improve light extraction efficiency Effect

Active Publication Date: 2019-06-04
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In GaN LEDs, p-GaN usually causes some current congestion at the bottom of the pad due to its low carrier mobility

Method used

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  • A light emitting diode and a manufacturing method thereof
  • A light emitting diode and a manufacturing method thereof
  • A light emitting diode and a manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] see Figure 3-5 ,in image 3 shows a top view of a light emitting diode according to a first preferred embodiment of the present invention, Figure 4 is along image 3 A side sectional view taken along the line A-A, Figure 5 is along image 3 A side sectional view taken along the line B-B. The LED comprises: a substrate 201 , an N-type layer 211 , a light-emitting layer 212 , a P-type layer 213 , an insulating layer 221 , a transparent conductive layer 230 , a protective layer 222 , a first electrode 241 , and a second electrode 242 . The first electrode 241 includes a pad 243 and an extension 244 , and the second electrode 242 includes a pad 245 and an extension 246 .

[0083] Specifically, the substrate 201 includes but is not limited to sapphire, aluminum nitride, gallium nitride, silicon, and silicon carbide, and its surface structure can be a planar structure or a patterned pattern structure; the N-type layer 211 is formed on the sapphire substrate 201 the l...

Embodiment 2

[0098] Figure 9 with 10 A schematic diagram showing the structure of another light-emitting diode, where Figure 9 for top view, Figure 10 along Figure 9 Sectional view cut by line A-A. The difference from Embodiment 1 is that in the light emitting diode structure described in this embodiment, the insulating layer 221 under the first electrode 241 is connected together, so that the current injection under the electrode can be completely avoided, and the height of the first electrode extension part 244 can be reduced. All of them are raised, and the refraction effect can be used to effectively reduce the metal light blocking area of ​​the electrode extension, thereby improving the light extraction efficiency of the LED.

Embodiment 3

[0100] Figure 11-12 A schematic diagram of the structure of another light-emitting diode is shown, where Figure 11 for top view, Figure 12 along Figure 11 Sectional view cut by line A-A. The difference from Embodiment 1 is that in the light-emitting diode structure described in this embodiment, under the extension portion 244 of the first electrode, the insulating layer 221 overlaps with the opening 251 of the protective layer 222, wherein the area of ​​the insulating layer 221 is smaller than that of the opening. 251 square meters. Figure 13 It shows a partially enlarged view of the extension 244 of the first electrode. The transparent conductive layer 230 forms a gap between the opening 251 and the protective layer 222. The extension 244 of the first electrode fills the gap. On the one hand, the first electrode is in the insulating layer. The position of 221 forms a nail pile structure, which increases the adhesion between the electrode extension 244 and the protect...

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PUM

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Abstract

The invention discloses a light emitting diode and a manufacturing method thereof. In some embodiments, the light emitting diode comprises: a light emitting epitaxial layer which comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer in order from top to bottom, and the upper surface of which is provided with a first electrode zone including a welding pad zone and an extension zone; an insulating layer formed on the extension zone of the first semiconductor layer; a transparent conductive layer formed on the surface of the first semiconductor layer and covering the insulating layer; a protective layer formed on the surface of the transparent conductive layer, forming a first opening in the extension zone, exposing a part of the surface of the transparent conductive layer of the extension zone; a first electrode formed on the protective layer, and including a pad portion and an extension portion, wherein the extension portion is electrically connected to the transparent conductive layer of the extension zone through the first opening.

Description

technical field [0001] The invention relates to a semiconductor element, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] Due to the advantages of long life, small size, high shock resistance, low heat generation and low power consumption, light-emitting diodes have been widely used in home appliances and indicators or light sources of various instruments. [0003] The early gallium nitride LED chip manufacturing process usually consists of four processes: mesa etching (MESA), making a transparent conductive layer (such as ITO), making electrodes and making a protective layer. The light-emitting diode chips formed by it are as follows: figure 1 As shown, it generally includes a substrate 101, an N-type layer 111, a light emitting layer 112, a P-type layer 113, a transparent conductive layer 120, a P electrode 141 (pad 143 and an extension bar 144), an N electrode 142 and a protective layer 130. In GaN LEDs, p-GaN typi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/14H01L33/36H01L33/44H01L33/46
CPCH01L33/145H01L33/387H01L33/62H01L33/46H01L33/14H01L33/36H01L33/38H01L33/44H01L33/382H01L2933/0016H01L2933/0025H01L33/405
Inventor 林素慧王锋洪灵愿许圣贤陈思河陈大钟彭康伟张家宏
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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