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Semiconductor device

A semiconductor and metal body technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, output power conversion devices, etc., can solve the problem of limited application range

Active Publication Date: 2019-06-11
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, as a whole semiconductor device, the range of use may be limited due to the active switching element on the side with a large amount of heat generation.

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0028] First, refer to figure 1 and figure 2 A schematic configuration of the semiconductor device according to this embodiment will be described.

[0029] The semiconductor device 100 of this embodiment is as figure 1 As shown, for example, a power conversion device that drives a motor 200 mounted on a vehicle includes switching elements constituting an inverter circuit 300 and a control unit that controls the switching elements.

[0030] The inverter circuit 300 is interposed between the motor 200 as a load and the power supply 400 , and converts DC power into AC power. A smoothing capacitor 500 is interposed between the inverter circuit 300 and the power supply 400 .

[0031] The inverter circuit 300 constitutes a three-phase AC inverter. The switching elements 10 are connected in series between the positive and negative electrodes of the power supply 400, one phase is formed by connecting the motor at its midpoint, and three switching elements 10 are connected in pa...

Deformed example 1

[0051] In the above-mentioned embodiment, an example in which the return threshold temperature is set to zero degrees when returning from the stop mode to the normal mode (return, return) has been described. It is sufficient that the threshold temperature as the allowable temperature difference is low.

[0052] For example, if Figure 5 As shown, the reset threshold Tr can also be the condition of T2-T1>0. This will be specifically described. After shifting to the stop mode at time t1, the temperature T2 of the second element 12 falls, and the temperature T1 of the first element 11 rises. The control unit 30 sets the temperature difference T2-T1 between the first element 11 and the second element 12 at a time t3 when the control signal rises from Low to High after the temperature difference T2-T1 between the first element 11 and the second element 12 falls to a predetermined positive value. Operation mode shifts to normal mode. Thereby, energization to the second element 1...

Deformed example 2

[0054] Also, in another example, as Image 6 As shown, the reset threshold Tr can also be the condition of T2-T1<0. This will be specifically described. As in the first embodiment and Modification 1, after shifting to the stop mode at time t1, the temperature T2 of the second element 12 decreases and the temperature T1 of the first element 11 increases. After the temperature difference T2-T1 between the first element 11 and the second element 12 has dropped to a predetermined negative value, the control unit 30 sets a time t4 as a time point when the control signal rises from Low to High. Operation mode shifts to normal mode. Thereby, energization to the second element 12 whose energization was stopped is restarted. In this example, the reset threshold Tr is set to ΔT≠0 and a value smaller than the threshold temperature Tth for shifting to the stop mode. Specifically, the reset threshold value Tr is set so that the value obtained by subtracting the temperature of the switc...

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PUM

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Abstract

This semiconductor device is provided with: a plurality of switching elements (11, 12) that are electrically connected to each other in parallel; a control unit (30) that outputs control signals for controlling energizing currents of the switching elements; and a temperature estimation unit (40) that estimates a temperature difference between the switching elements. When an estimated temperature difference is equal to or higher than a predetermined threshold temperature, the control unit shifts to stop mode, in which drive of a switching element at a relatively high temperature is stopped.

Description

[0001] Cross-reference of related applications [0002] This application is based on Japanese Patent Application No. 2016-185851 for which it applied on September 23, 2016, and uses the description content here. technical field [0003] The present disclosure relates to a semiconductor device that controls switching elements driven in parallel. Background technique [0004] In a semiconductor device that cannot be driven by a single active switching element and handles a relatively large current, a method of driving the active switching elements by connecting them in parallel is used. [0005] Among active switching elements connected in parallel, a larger current may flow through one active switching element than the other due to differences in element types or differences in threshold voltage or on-resistance despite the same type of elements. This causes a difference in the amount of heat generated between the active switching elements connected in parallel. Therefore, ...

Claims

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Application Information

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IPC IPC(8): H02M1/00H02M1/08H02M7/48H03K17/12H01L25/07H01L25/18
CPCH01L23/4334H02M1/088H02M7/003H01L2224/06181H01L2224/32245H01L2224/33181H01L23/34H02M7/5387H03K17/127H03K2017/0806H02P29/68H02P27/08H02M1/327H03K17/12H01L25/072H02M1/08H02P27/06H03K17/567
Inventor 秋山博则
Owner DENSO CORP