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A kind of preparation method of bent snte single crystal nanowire
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A single-crystal nano-bending technology, which is applied in the direction of single-crystal growth, single-crystal growth, nanotechnology, etc., can solve problems such as the inability to obtain SnTe single-crystal nanowires with a bent structure, and achieve the effect of simple operation
Active Publication Date: 2020-05-22
PEKING UNIV
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However, in this method, moving the high-temperature-resistant furnace tube is only to provide suitable nanowire growth conditions, which can only be used to grow straight SnSe single crystal nanowires, and cannot obtain bent SnTe single crystal nanowires.
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Embodiment 1
[0039] This embodiment discloses a method for preparing a bent SnTe single crystal nanowire, specifically as follows:
[0044] 4 inches of Si / SiO 2The slices were placed in acetone, absolute ethanol, and distilled water for 5 minutes, and the distilled water on the surface was blown dry with a high-pressure nitrogen gun after taking out the slices. Then put the cleaned sheet into an evaporative vacuum coatingmachine, and coat the surface with a 3nm thick gold film. Finally, use a diamond knife to cut the coated sheet, and cut it into a substrate with a size of 5mm×5mm.
[0045] 2. Pre-growth preparation
[0046] Such as figure 1 As shown, the present invention adopts SnTe powder as a growth source, weighs 0.2g of SnTe powder and places it in a qua...
Embodiment 2
[0052] This example discloses a method for preparing bent SnTe single crystal nanowires, which is roughly the same as Example 1, except that the thickness of the gold film is selected to be 2nm, the gas that does not participate in the reaction is selected as helium, and the growth conditions of the nanowires are selected at 18kPa and 690°C Keep it down for 16 minutes, the distance between the substrate and the SnTe powder is 14.5 cm, and the moving distance of the tubular heating furnace to the downstream of the carrier gas flow is 0.9 cm. This example also successfully prepared bent SnTe single crystal nanowires.
Embodiment 3
[0054] This example discloses a method for preparing bent SnTe single crystal nanowires, which is roughly the same as Example 1, except that the thickness of the gold film is selected to be 4nm, the gas that does not participate in the reaction is selected as neon, and the growth conditions of the nanowires are selected at 22kPa and 710°C Keep it down for 14 minutes, the distance between the substrate and the SnTe powder is 15.5 cm, and the moving distance of the tubular heating furnace to the downstream of the carrier gas flow is 0.8 cm. This example also successfully prepared bent SnTe single crystal nanowires.
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Abstract
The invention discloses a preparation method of bent SnTe single crystal nanowires. The method comprises the following steps of plating a layer of gold film onto the surface of an Si / SiO2 chip to be used as a substrate; putting the substrate and an SnTe powder source into a quartz tube; then, putting the quartz tube into a tubular heating furnace; using gas which does not participate in the reaction as cleaning gas; exhausting the air in the tubular heating furnace in a repeated inflation and deflation way; using argon gas as carrier gas; enabling the SnTe powder to be positioned in the rightcenter of a heating furnace and the substrate to be positioned at the carrier gas flowing downstream; starting the tubular heating furnace for heating; growing nanowires under the growth condition; moving the tubular heating furnace for a distance towards the carrier gas flow flowing downstream; continuously growing the bending part nanowires under the same growth conditions; performing natural temperature lowering to obtain the bent SnTe single crystal nanowires.
Description
technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a method for preparing a bent SnTe (tintelluride) single crystalnanowire based on a vapor deposition method. Background technique [0002] Topological crystal insulators are a hot spot in the research of nano-quantum materials in recent years. They have non-trivial gapless conductive surface states (topological surface states) and insulating bulk states, and their topological surface states are protected by crystal plane symmetry. SnTe is a typical topological crystalline insulator material. Theoretical calculations show that there are topological states associated with crystal planes in SnTe materials, and typical quantum effects in SnTe nanowires have been detected experimentally, proving the existence of gapless topological surface states. The topological properties of SnTe nanowires enable them to be applied in the fields of non-dissipation quan...
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