III-group nitride layer on silicon substrate

Abstract

The invention discloses an III-group nitride layer on a silicon substrate. The III-group nitride layer comprises a silicon substrate, and an III-group nitride buffer layer, an III-group nitride bottomlayer and an III-group nitride functional layer which are arranged on the silicon substrate in sequence, wherein the III-group nitride bottom layer comprises a middle layer and a substrate layer; themiddle layer comprises the components of BxAlyGa1-x-yN, wherein x is greater than or equal to 0.05 and less than or equal to 1, y is greater than or equal to 0 and less than or equal to 1, and x+ y is greater than or equal to 0 and less than or equal to 1; and the substrate layer comprises the components of AlzGa1-zN, wherein z is greater than or equal to 0 and less than or equal to 1. The III-group nitride layer has the following advantages that compared with a traditional AlGaN middle layer which is used when the III-group nitride layer grows on a silicon substrate, due to the fact that theB-N bond has higher bond strength and stronger fracture toughness than Al-N bond, more compressive stress can be accumulated in the growth process of the invention, the III-group nitride layer with alarger critical fracture thickness can be realized, and the performance of the III-group nitride semiconductor device is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a group III nitride layer on a silicon substrate. Background technique [0002] Group III nitride materials have broad application prospects in many fields. For example, blue light-emitting diodes (LEDs) made of InGaN-based materials can realize high-efficiency and high-reliability solid-state lighting, and have rapidly achieved industrialization. High electron mobility transistors (HEMTs) made of AlGaN-based materials can work at extremely high frequencies and have also attracted extensive attention from researchers. At present, the vast majority of Group III nitride materials are realized by epitaxial growth on heterogeneous substrates. Commonly used heterogeneous substrates include sapphire substrates, silicon carbide substrates and silicon substrates. Each of these three substrates has its own advantages and disadvantages. Among them, silicon substrates have great pot...

AI Technical Summary

Problems solved by technology

However, the thickness of the crack-free III-nitride layer obtained by the above method is still only 1~4um, which is still thinner than the ideal thickness of the III-nitride semiconductor device, thus restricting the silicon substrate to a certain extent. The performance of III-nitride semiconductor devices on

Images