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DMOS and manufacturing method of integrated starting tube, sampling tube and resistor

A manufacturing method and start-up tube technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of high loss and high cost, reduce start-up loss, reduce standby power consumption, and improve energy conversion efficiency Effect

Inactive Publication Date: 2019-06-14
NANJING HRM SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The startup loss and current sampling loss of this circuit are relatively high, and the cost of manufacturing them separately is relatively high

Method used

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  • DMOS and manufacturing method of integrated starting tube, sampling tube and resistor
  • DMOS and manufacturing method of integrated starting tube, sampling tube and resistor
  • DMOS and manufacturing method of integrated starting tube, sampling tube and resistor

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Embodiment Construction

[0046] The present invention will be further illustrated below in conjunction with the accompanying drawings and specific embodiments. This embodiment is implemented on the premise of the technical solution of the present invention. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention.

[0047] Such as Figures 1 to 12As shown, the embodiment of the present invention provides a DMOS integrating a startup transistor, a sampling transistor and a resistor, including a common substrate 1 and an epitaxial layer 2 disposed on the upper side of the substrate 1 . The substrate 1 adopts N-type (100) crystal orientation, is doped with arsenic element or antimony element, and the resistivity is usually less than 0.1Ω / cm. For ease of manufacture, the original thickness of the substrate 1 is preferably 625-675 μm. After the fabrication is completed, the substrate 1 needs to be reduc...

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Abstract

The invention discloses a DMOS and manufacturing method of an integrated starting tube, a sampling tube and a resistor. The DMOS comprises a sharing substrate and an epitaxial layer, wherein the epitaxial layer is arranged at an upper side of the substrate, a main MOS tube, the sampling tube and the starting tube are integrally arranged on the epitaxial layer, the main MOS tube, the sampling tubeand a Drain end of the sampling tube are connected, the main MOS tube is connected with a Gate end of the sampling tube, a Gate and a source of the starting end are independent to each other, and theGate end is simultaneously connected to the Drain end by a resistor. By the DMOS, the starting loss and the current sampling loss in the circuit can be reduced, the standby power consumption is reduced, the energy conversion efficiency is improved, meanwhile, the process of integrating the starting tube, the sampling tube and the resistor is compatible with a conventional DMOS process, and the cost can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductor devices and its manufacture, in particular to a DMOS integrating a starting tube, a sampling tube and a resistor and a manufacturing method thereof. Background technique [0002] DMOS has a similar structure to CMOS devices, and also has electrodes such as source, drain, and gate, but the breakdown voltage of the drain terminal is high. There are two main types of DMOS, vertical double diffused metal oxide semiconductor field effect transistor and lateral double diffused metal oxide semiconductor field effect transistor. Existing DMOS products are generally separate components, and when used, they cooperate with external connections such as sampling tubes, starting tubes, and resistors to form corresponding circuits. The start-up loss and the current sampling loss of such a circuit are relatively high, and the respective manufacturing costs are relatively high. Contents of the invention [0003] T...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L21/336
Inventor 胡兴正陈虞平刘海波
Owner NANJING HRM SEMICON CO LTD
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