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Memristor based on erbium oxide film and preparation method of memristor

A technology of erbium oxide and memristor, which is applied in the field of memristive device and its preparation based on erbium oxide thin film, achieving good application prospects, excellent performance and good repeatability

Active Publication Date: 2019-06-14
SOUTHWEST JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although there are many reports on memristors, there are still many basic tasks that have not been solved, such as the synthesis of materials with more obvious memristive effects and more advanced thin film preparation technologies, and at the same time, further clarification of the resistance transition mechanism of memristor RAM

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  • Memristor based on erbium oxide film and preparation method of memristor
  • Memristor based on erbium oxide film and preparation method of memristor
  • Memristor based on erbium oxide film and preparation method of memristor

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with accompanying drawing and specific embodiment:

[0024] The preparation method of the memristive device of the present invention comprises the following steps:

[0025] S1. Cleaning the substrate: Put the substrate in deionized water, alcohol, acetone, alcohol, and deionized water in sequence, and ultrasonically clean it for 10-20 minutes respectively. After the substrate is dried, put it into the magnetron sputtering chamber;

[0026] S2. Prepare the bottom electrode: install the sputtering source of the bottom electrode in the magnetron sputtering chamber, that is, ITO or Ag target, set the distance from the target to the substrate to be 8-12 cm, and vacuum the sputtering chamber Draw to less than 5×10 -4 Pa, argon with a purity of 99.999% is introduced as the working gas, the sputtering pressure is 1.0-2.0Pa, the DC sputtering current is 0.2-0.3A, and the sputtering time is 10-20min;

[0027] ...

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Abstract

The invention discloses a memristor based on an erbium oxide film and a preparation method of the memristor. The memristor comprises a top electrode, an erbium oxide film and a bottom electrode, wherein the erbium oxide film is located between the top electrode and the bottom electrode, wherein the top electrode and the bottom electrode are made of indium tin oxide or silver separately. The preparation method of the memristor based on the erbium oxide film comprises the following steps of S1, carrying out cleaning on a substrate; S2, adopting a magnetron sputtering method, taking indium tin oxide or a silver target is used as a sputtering source, and enabling the bottom electrode to be sputtered and deposited on the substrate; S3, adopting a radio frequency sputtering method, taking an erbium oxide target material as a sputtering source, and enabling a functional layer Er2O3 film to be deposited on the bottom electrode; and S4, adopting a direct current sputtering method, taking indiumtin oxide or silver target as a sputtering source, and enabling the upper electrode to be deposited on the surface of the erbium oxide film. The device is simple in structure, excellent in performance, stable, high in repeatability, simple in preparation method steps, and high in application prospect in the fields of novel memories, oscillators and other electronic devices.

Description

technical field [0001] The invention belongs to the field of semiconductor thin film devices, and in particular relates to a memristive device based on an erbium oxide thin film and a preparation method thereof. Background technique [0002] With the development of information science, the electronic information industry has also developed rapidly. Electronic devices are the foundation of the information industry, and the continuous technological innovation of electronic components is a powerful driving force for the rapid development of information science and technology. At the same time, people's requirements for the performance of electronic devices are getting higher and higher, which is undoubtedly a challenge that modern people pose to the scientific community. As a new type of electronic components, memristor has attracted extensive attention of researchers due to its unique non-volatile electrical characteristics and superior performance. And the memristor is cons...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 赵勇毛双锁孙柏付国强李冰
Owner SOUTHWEST JIAOTONG UNIV
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