Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity

A polishing composition, chemical-mechanical technology, applied in polishing compositions containing abrasives, other chemical processes, chemical instruments and methods, etc., can solve problems affecting device manufacturing, affecting device quality and performance, oxide loss, etc.

Active Publication Date: 2019-06-18
CMC MATERIALS INC
View PDF21 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Recessing is undesirable because recessing of substrate features can adversely affect device fabrication by causing transistors and transistor components (assemblies) to fail to isolate from each other, thereby causing short circuits
Additionally, over-polishing of the substrate can also lead to oxide loss and expose the underlying oxide to damage from polishing or chemical activity, which adversely affects device quality and performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity
  • Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity
  • Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] This example demonstrates that a polishing composition comprising polyethylene glycol dicarboxylic acid (polyethyleneglycol dicarboxylic acid) and 3,5-dihydroxybenzoic acid according to the present invention exhibits reduced nitride loss and depressions.

[0073] Three separate patterned substrates containing 100 μm silicon nitride features on silicon oxide capped substrates were polished using three different polishing compositions (ie, Polishing Compositions 1A-1C). Polishing Compositions 1A-1C each contained 0.2 wt% wet-process cerium oxide (ceria, ceria, cerium oxide) in water at pH 3.6. Polishing Composition 1A also contained 100 ppm polyethylene glycol dicarboxylic acid and 250 ppm 3,5-dihydroxybenzoic acid. Polishing Composition 1B also contained 300 ppm polyethylene glycol dicarboxylic acid and 100 ppm 3,5-dihydroxybenzoic acid. In addition, Polishing Composition 1C contained no polyethylene glycol dicarboxylic acid, but contained 450 ppm of 3,5-dihydroxybenzo...

Embodiment 2

[0079] This example demonstrates that improved SiO removal rates are exhibited by polishing compositions according to the invention comprising 3,5-dihydroxybenzoic acid.

[0080] Separate substrates comprising blanket layers of TEOS or HDP (High Density Plasma Silicon Oxide) were polished with two different polishing compositions (Polishing Compositions 2A and 2B). Polishing Composition 2A (comparative) contained 0.2% by weight wet process ceria (ceria, ceria, cerium oxide), polyethylene glycol dicarboxylic acid (polyethylene glycol dicarboxylic acid, polyethylene glycol dicarboxylic acid) and polyethylene glycol dicarboxylic acid in water. Vinyl alcohol, at pH 3.6. Polishing Composition 2B (invention) contained all components of Polishing Composition 2A in the same amounts as included in Polishing Composition 2A, and further contained 3,5-dihydroxybenzoic acid.

[0081] After polishing, the removal rate was determined and the results are set forth in Table 2.

[0082] Table...

Embodiment 3

[0086] This example demonstrates that reduced nitride loss and dishing is exhibited by a polishing composition according to the present invention comprising 3,5-dihydroxybenzoic acid.

[0087] A separate patterned substrate comprising 100 μm silicon nitride features on a silicon oxide capped substrate was polished with two different polishing compositions (ie, Polishing Compositions 2A and 2B as described in Example 2).

[0088] The substrate was polished as follows: 53 seconds to endpoint + 16 seconds after exposing the SiN layer. After polishing, dishing (recesses within trenches) and silicon nitride loss at 100 μm x 100 μm features were measured. The results are set forth in Table 3.

[0089] Table 3: Nitride loss and dishing

[0090]

[0091] It is clear from the results set forth in Table 3 that the presence of 3,5-dihydroxybenzoic acid in Polishing Composition 2B causes SiN loss and dishing, respectively, approximately that exhibited by Polishing Composition 2A with...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
molecular weightaaaaaaaaaa
molecular weightaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a chemical-mechanical polishing composition containing abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula (I), wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, and water, and the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and / or polysilicon.

Description

Background technique [0001] Compositions and methods for planarizing or polishing substrate surfaces are well known in the art. Polishing compositions (also known as polishing slurries) typically contain abrasive materials in a liquid carrier and are applied to a surface by contacting the surface with a polishing pad saturated with the polishing composition. Typical abrasive materials include silicon dioxide, cerium oxide, aluminum oxide, zirconium oxide and tin oxide. Polishing compositions are typically used in conjunction with polishing pads, such as polishing cloths or discs. Instead of being suspended in the polishing composition, or in addition to being suspended in the polishing composition, the abrasive material may be introduced into the polishing pad. [0002] As a method for isolating elements of semiconductor devices, much attention has been drawn to a shallow trench isolation (STI) process in which a silicon nitride layer is formed on a silicon substrate, and sh...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14B24B37/00
CPCC09G1/02B24B37/00C09K3/1409C09K3/1463H01L21/30625H01L21/31053H01L21/3212
Inventor S.帕利卡拉库蒂亚托尔C.汉密尔顿K.P.多克利
Owner CMC MATERIALS INC
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com