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Flexible V2O5/Ge2Sb2Te5 nanometer multilayer phase-change thin film material and preparation method thereof

A nano-multilayer, thin-film material technology, applied in metal material coating process, coating, ion implantation plating and other directions, can solve the problems of differential thermal stability, low crystallization temperature, etc., to achieve good thermal stability, fast phase The effect of variable speed and high data retention capability

Active Publication Date: 2019-06-21
JIANGSU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve above-mentioned prior art Ge 2 Sb 2 Te 5 (GST) phase change material has a lower crystallization temperature, poor thermal stability and phase change problems of flexible materials after bending. The invention provides a flexible V 2 o 5 / Ge 2 Sb 2 Te 5 Nano multilayer phase change thin film material, through Ge 2 Sb 2 Te 5 V with low thermal conductivity and stable performance is added to the film 2 o 5 film, forming V 2 o 5 / Ge 2 Sb 2 Te 5 Multi-layer nano-film structure, a new type of flexible phase-change memory film with adjustable crystallization temperature and variable crystallization resistance

Method used

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  • Flexible V2O5/Ge2Sb2Te5 nanometer multilayer phase-change thin film material and preparation method thereof
  • Flexible V2O5/Ge2Sb2Te5 nanometer multilayer phase-change thin film material and preparation method thereof
  • Flexible V2O5/Ge2Sb2Te5 nanometer multilayer phase-change thin film material and preparation method thereof

Examples

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Effect test

Embodiment 1

[0032] [V 2 o 5 (1) / Ge 2 Sb 2 Te 5 (9)] The preparation of 5 nanometer multilayer thin film phase change material is as follows:

[0033] (1) Cleaning mica slices: Ultrasonic cleaning in ethanol solution for 50-60 minutes, rinsing with deionized water, high-purity N 2 Dry the surface and the back; dry the water vapor in an oven at 150°C until the surface is dry; set aside;

[0034] (2) Preparation before magnetron sputtering: place the mica sheet in step (1) on the base, install the V to be sputtered 2 o 5 Target and Ge 2 Sb 2 Te 5 target, the magnetron sputtering chamber was evacuated to 1 × 10 -4 Pa, using high-purity Ar gas as the sputtering gas; set the sputtering power to 30W; set the Ar gas flow to 30 sccm, and adjust the sputtering pressure to 0.40Pa.

[0035] (3) preparation [V 2 o 5 (1) / Ge 2 Sb 2 Te 5 (9)] 5 nanometer multilayer thin film phase change material:

[0036] a) Rotate the empty base to V respectively 2 o 5 Target and Ge 2 Sb 2 Te 5 ta...

Embodiment 2

[0041] [V 2 o 5 (3) / Ge 2 Sb 2 Te 5 (7)] the preparation method of 5 nanometer multilayer film phase-change material is identical with embodiment 1, difference is: set Ge in step (3) b, c 2 Sb 2 Te 5 Target sputtering time 12s, V 2 o 5 The sputtering time of the target is 150s.

Embodiment 3

[0043] [V 2 o 5 (5) / Ge 2 Sb 2 Te 5 (5)] The preparation method of 5 nanometer multilayer film phase-change material is identical with embodiment 1, difference is: set Ge in step (3) b, c2 Sb 2 Te 5 The sputtering time of the target is 8s, V 2 o 5 The sputtering time of the target is 250s.

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Abstract

The invention relates to a flexible V2O5 / Ge2Sb2Te5 nanometer multilayer phase-change thin film material and a preparation method thereof. The material is a multilayer composite membrane structure; V2O5 layers and Ge2Sb2Te5 layers are alternately deposited on a flexible base material; one Ge2Sb2Te5 layer and one V2O5 layer are taken as an alternating period; and the Ge2Sb2Te5 layer of the next alternating period is deposited above the V2O5 layer of the previous alternating period. Being deposited on the flexible base material to express good plastic deformation characteristics, the material hashuge potential in flexible storage application; under the condition of being bent under a stretching amount of 5.62%, the material still has an obvious amorphous state-crystalline state reversible phase change process, a relatively high phase change speed, good thermal stability and high data holding ability, and is suitable for data storage under high-temperature environment; and the phase change performance of the material can be effectively controlled through the thicknesses of the added V2O5 layers and the period number.

Description

technical field [0001] The invention relates to the technical field of flexible information storage, in particular to a flexible V 2 o 5 / Ge 2 Sb 2 Te 5 Nano multilayer phase change thin film material and preparation method thereof. Background technique [0002] Phase-change memory (PCRAM) based on chalcogenide materials is a new type of non-volatile memory that uses materials to switch between crystalline and amorphous states to store information. When the phase change material is in the amorphous state, it has high resistance, and in the crystalline state, it has low resistance. The Joule heat generated by the electric pulse is used to rearrange or disrupt the internal atoms of the phase change material, so as to realize the transition between the high resistance state and the low resistance state. Repeated conversion, to achieve the purpose of information storage. It has the advantages of fast reading speed, strong stability, low power consumption, high storage dens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00C23C14/35C23C14/08C23C14/06
Inventor 胡益丰徐永康朱小芹邹华
Owner JIANGSU UNIV OF TECH
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