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a flexible v 2 o 5 /ge 2 sb 2 te 5 Nano multilayer phase change thin film material and preparation method thereof

A nano-multilayer, thin-film material technology, applied in metal material coating process, coating, vacuum evaporation plating and other directions, can solve the problems of differential thermal stability, low crystallization temperature, etc., to achieve good thermal stability, fast phase The effect of variable speed and high data retention capability

Active Publication Date: 2022-03-25
JIANGSU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve above-mentioned prior art Ge 2 Sb 2 Te 5 (GST) phase change material has a lower crystallization temperature, poor thermal stability and phase change problems of flexible materials after bending. The invention provides a flexible V 2 o 5 / Ge 2 Sb 2 Te 5 Nano multilayer phase change thin film material, through Ge 2 Sb 2 Te 5 V with low thermal conductivity and stable performance is added to the film 2 o 5 film, forming V 2 o 5 / Ge 2 Sb 2 Te 5 Multi-layer nano-film structure, a new type of flexible phase-change memory film with adjustable crystallization temperature and variable crystallization resistance

Method used

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  • a flexible v <sub>2</sub> o <sub>5</sub> /ge <sub>2</sub> sb <sub>2</sub> te <sub>5</sub> Nano multilayer phase change thin film material and preparation method thereof
  • a flexible v <sub>2</sub> o <sub>5</sub> /ge <sub>2</sub> sb <sub>2</sub> te <sub>5</sub> Nano multilayer phase change thin film material and preparation method thereof
  • a flexible v <sub>2</sub> o <sub>5</sub> /ge <sub>2</sub> sb <sub>2</sub> te <sub>5</sub> Nano multilayer phase change thin film material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] [V 2 O 5 (1) / Ge 2 Sb 2 Te 5 (9)] The preparation of the 5-nanometer multilayer thin film phase change material is as follows:

[0033] (1) Cleaning mica flakes: ultrasonically clean in ethanol solution for 50-60 minutes, rinse with deionized water, high-purity N 2 Dry the surface and back; dry the water vapor in an oven at 150°C until the surface is dry; set aside;

[0034] (2) Preparation before magnetron sputtering: place the mica sheet in step (1) on the base, install the V to be sputtered 2 O 5 Target and Ge 2 Sb 2 Te 5 target, vacuum the magnetron sputtering chamber to 1×10 -4 Pa, use high-purity Ar gas as the sputtering gas; set the sputtering power to 30W; set the Ar gas flow to 30sccm, and adjust the sputtering gas pressure to 0.40Pa.

[0035] (3) Preparation [V 2 O 5 (1) / Ge 2 Sb 2 Te 5 (9)] 5nm multilayer thin film phase change material:

[0036] a) Rotate the empty base to V respectively 2 O 5 Target and Ge 2 Sb 2 Te 5 target, open V 2 O...

Embodiment 2

[0041] [V 2 O 5 (3) / Ge 2 Sb 2 Te 5 (7)] The preparation method of the 5-nanometer multi-layer thin film phase change material is the same as that of Example 1, except that: Ge is set in steps (3) b and c. 2 Sb 2 Te 5 Target sputtering time 12s, V 2 O 5 The sputtering time of the target is 150s.

Embodiment 3

[0043] [V 2 O 5 (5) / Ge 2 Sb 2 Te 5 (5)] The preparation method of the 5-nanometer multilayer thin film phase change material is the same as that in Example 1, the difference is that Ge is set in steps (3) b and c.2 Sb 2 Te 5 Target sputtering time 8s, V 2 O 5 The sputtering time of the target is 250s.

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Abstract

The present invention relates to a flexible V 2 o 5 / Ge 2 Sb 2 Te 5 Nano multilayer phase change thin film material and preparation method thereof, the material of the present invention is a multilayer composite film structure, by V 2 o 5 layer and Ge 2 Sb 2 Te 5 Layers are alternately deposited on the flexible base material, the Ge 2 Sb 2 Te 5 layers and V 2 o 5 layer as an alternating period, the latter alternating period of Ge 2 Sb 2 Te 5 layer deposited on the previous alternate cycle of V 2 o 5 layer above. Due to the good plastic deformation characteristics of the material deposited on the flexible base material, it has great potential in flexible storage applications; it still has an obvious amorphous-crystalline state when the material is bent at a stretch of 5.62% The reversible phase change process and faster phase change speed, better thermal stability, and higher data retention ability are suitable for data storage in high temperature environments; the phase change performance of the material can be improved by adding V 2 o 5 The thickness of the layer and the number of cycles can be effectively controlled.

Description

technical field [0001] The invention relates to the technical field of flexible information storage, in particular to a flexible V 2 O 5 / Ge 2 Sb 2 Te 5 Nano multilayer phase change film material and preparation method thereof. Background technique [0002] Phase change memory (PCRAM) based on chalcogenide materials is a new type of non-volatile memory that uses materials to convert between crystalline and amorphous states to achieve information storage. When the phase change material is in the amorphous state, it has high resistance, and when it is in the crystalline state, it has low resistance. The Joule heat generated by the electrical pulse is used to rearrange or scramble the atoms inside the phase change material, so as to realize the high resistance state and the low resistance state. Repeated conversion to achieve the purpose of information storage. It has the advantages of fast reading speed, strong stability, low power consumption, high storage density, and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00C23C14/35C23C14/08C23C14/06
Inventor 胡益丰徐永康朱小芹邹华
Owner JIANGSU UNIV OF TECH
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