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Low-k dielectric composition for high frequency applications

A technology of dielectric materials and dielectric constants, applied in circuits, electrical components, printed circuits, etc., can solve problems such as high working temperature, inability to handle, low mechanical strength, etc.

Active Publication Date: 2019-06-25
FELLOWES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even for these materials, it is not possible to fabricate them in bulk (e.g. free-standing bulk resonators) using conventional casting or sintering methods.
Additionally, these materials typically operate at lower frequencies (low MHz) rather than higher frequencies and cannot handle higher operating temperatures, higher energy densities, and lower mechanical strength

Method used

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  • Low-k dielectric composition for high frequency applications
  • Low-k dielectric composition for high frequency applications
  • Low-k dielectric composition for high frequency applications

Examples

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Embodiment

[0073] The following examples in Tables 5A-5B are provided to illustrate preferred aspects of the invention and are not intended to limit the scope of the invention.

[0074] To further evaluate the various aspects and benefits of the inventive subject matter, a series of studies were conducted to evaluate dielectric materials and fired dielectric devices formed from the dielectric materials in accordance with the inventive subject matter. Table 5A below shows the expected range of glass component oxides, and the glass component oxides present in Example 1 and Example 2 prepared in accordance with the inventive subject matter.

[0075] Table 5A

[0076]

[0077] In Table 5A, Example 1 was fired at a peak temperature of 900°C for 1 hour, and Example 2 was fired at a peak temperature of 850°C for 1 hour, both of which contained 3.5 grams of the glass component (or glass material) and 1.5 grams of amorphous silicon dioxide. Example 2 also contained 0.6 grams (approximately 1...

Embodiment 2

[0080] Example 2 is fired at 850°C to form a transparent dielectric layer, such as Figure 7 As shown, its thickness is 0.19mm, the sintered density is 86.5%, the Q value at 10GHz is 2697.8, and the loss tangent value is 1.71×10 -2 , the K value at 10GHz is 3.74. The SEM figure of embodiment 2 is shown in Figure 8 and Figure 9 middle.

[0081] A comparative example was prepared by firing only the glass component (EG2790 available from Ferro Corporation) without adding any silica powder. The comparative example was fired at 700°C to produce Figure 10 The transparent 0.16mm thick dielectric layer shown has a Q value of 9021.7 at 10GHz and a loss tangent of 2.91×10 -3 , the K value at 10GHz is 3.14. Although the comparative example has a high Q value and a low K value, it is believed that the silver migration in the comparative example will be greater than that in the inventive examples 1 and 2, which can be problematic when co-fired with silver conductors in LTCC applicat...

Embodiment 3

[0086] Example 3 also includes 0.4 grams (about 4% by weight) of nano-silica and 0.8 grams of Al 2 o 3 (about 8% by weight), while Example 4 also included 1.2 grams (about 12% by weight) of Al 2 o 3 .

[0087] As mentioned above, increasing the mechanical strength of the sintered dielectric material can be important for a robust substrate. In Example 3 and Example 4, various strength additives can be added, and compared with Example 1, the strength is improved. The strength value of Example 1 is 95.2 MPa, while the strength values ​​of Example 3 and Example 4 are 135.8 MPa and 128.6 MPa, respectively. This increase in strength can be attributed to the reduction of pores in the samples and the addition of high Young's modulus fillers.

[0088] The inventive subject matter can be further explained in the following items:

[0089] Item 1 - A sintered dielectric material comprising, prior to sintering, a solid portion comprising 10% to 99% by weight of D-50 silica powder hav...

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Abstract

The present invention provides a low-K dielectric composition for high frequency applications. The invention relates to a low-K, high-Q, low fired dielectric materials and a method of forming a fireddielectric material. The dielectric material can be fired at 950 DEG C or below or 1,100 DEG C or below, the K value is less than about 8 at 10GHz to 30GHz, and the Q value is greater than 500 or greater than 1,000 at 10GHz to 30GHz. Before firing, the dielectric material comprises a solid portion comprising a silica powder and a glass component. The glass component contains SiO2, B2O3, Al2O3, K2O, Na2O, Li2O and F; the total amount of Li2O + Na2O + K2O is from 0.1 mol% to 30 mol% of the glass component. The silica powder may be amorphous or crystalline.

Description

technical field [0001] The subject matter of the present invention relates to dielectric compositions which can be sintered at 1100°C, 950°C, or 900°C or lower and which, upon combustion, produce Dielectric components with a low dielectric constant K (that is, the relative dielectric constant of the dielectric material), which have a Q value greater than 500, or a system greater than 1000, for high-frequency applications, such as radio, smart cars (77GHZ to 80GHZ), mobile (2GHZ to 27GHZ) automotive radar, and low temperature co-fired ceramic (LTCC) applications. Background technique [0002] In communication applications, dielectric materials with high quality factor (Q) are required to manufacture dielectric layers, because high Q materials have a low energy loss rate, so the oscillations generated in the material last longer without loss of strength . The Q factor of a dielectric material is 1 / tanθ, where tanθ is the dielectric loss tangent. For high-frequency applicati...

Claims

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Application Information

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IPC IPC(8): C03C3/091C03C3/118
CPCC03C3/118C03C4/16C03C12/00C03C14/004C04B35/14C03B19/00H01L23/15H05K1/0306C03C2214/04C04B2235/3203C04B2235/3206C04B2235/3217C04B2235/3225C04B2235/3232C04B2235/3234C04B2235/3244C04B2235/3284C04B2235/3409C04B2235/3436C04B2235/3472C04B2235/3481C04B2235/36C04B2235/365C04B2235/3826C04B2235/3873C04B2235/445C04B2235/447C04B2235/5436C04B2235/5445C04B2235/5454C04B2235/77C04B2235/80C04B2235/9607H01B3/08C03C3/091C03C8/04H01B5/00C03C3/04C03C10/0027
Inventor 科迪·J·格利森约翰·J·马洛尼斯里尼瓦桑·斯里哈兰乔治·E·萨科斯科彼得·马利穆罕默德·H·麦格赫希叶·纱因·赫尔奥维尔·W·布朗杰基·D·戴维斯托马斯·约瑟夫·科菲埃伦·S·陶梅王志丞大卫·L·维德莱夫斯基
Owner FELLOWES INC
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