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Quantum dot surface ligand, and quantum dot film, preparation method and applications thereof

A technology of surface ligands and quantum dots, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., can solve the problems of slow exchange rate, weak binding ability of ligands and quantum dots, etc., to increase exchange The effect of speed, improving binding force, and good stability

Inactive Publication Date: 2019-06-25
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a ligand on the surface of quantum dots, which aims to solve the problem that the chain end of the ligand on the surface of quantum dots only contains a kind of functional group combined with quantum dots. The problem of relatively weak binding ability and slow exchange rate

Method used

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  • Quantum dot surface ligand, and quantum dot film, preparation method and applications thereof
  • Quantum dot surface ligand, and quantum dot film, preparation method and applications thereof
  • Quantum dot surface ligand, and quantum dot film, preparation method and applications thereof

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preparation example Construction

[0034] Correspondingly, the embodiment of the present invention also provides a method for preparing a quantum dot thin film, comprising the following steps:

[0035] S01. Provide a quantum dot prefabricated film, and configure a quantum dot surface ligand solution, wherein the quantum dot surface ligand in the quantum dot surface ligand solution is the above-mentioned quantum dot surface ligand;

[0036] S02. Depositing the quantum dot surface ligands on the surface of the quantum dot prefabricated film, and obtaining the quantum dot film after cleaning.

[0037] The preparation method of the quantum dot thin film provided by the embodiment of the present invention uses the quantum dot surface ligands containing multiple active functional groups at the chain end to replace the original organic ligands on the quantum dot surface, which improves the exchange rate and the quantum dot surface ligands. The binding force between the quantum dots endows the obtained quantum dot film...

Embodiment 1

[0065] A quantum dot surface ligand, including the compound shown in the following structure (compound name is pentaerythritol tetra-3-mercapto propionate):

[0066]

Embodiment 2

[0068] A QLED device, comprising a stacked anode, a quantum dot light-emitting layer and a cathode, the preparation method of the QLED device comprises the following steps:

[0069] E11. Dissolving 2,3-dimercaptosuccinic acid in ethanol to prepare a quantum dot surface ligand solution;

[0070] E12. Print the CdSe quantum dot luminescent prefabricated layer sequentially on the ITO anode, then immerse the quantum dot luminescent prefabricated layer into the quantum dot surface ligand solution in step E11, take it out after soaking for 10min, and then transfer it to the vacuum chamber , adjusting the vacuum degree to 10 Pa and maintaining it for 30 minutes, removing uncoordinated ligands and solvents in the quantum dot light-emitting layer, and obtaining the quantum dot light-emitting layer;

[0071] E13. Evaporating an Al cathode on the quantum dot light emitting layer to obtain a positive structure quantum dot light emitting diode.

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Abstract

The present invention provides a quantum dot surface ligand, which comprises at least one selected from compounds represented by the following structural formulas 1-4, wherein R, R1, R1', R2, R2', R3,R3', R4, R4', R5 and R5' are independently selected from hydrocarbonyl or a hydrocarbonyl derivative, and X1, X1', X2, X2', X3 and X3' are reactive functional groups capable of binding to quantum dots.

Description

technical field [0001] The invention belongs to the technical field of quantum dot preparation, and in particular relates to a quantum dot surface ligand, a quantum dot thin film and a preparation method and application thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is a new type of light-emitting device, which uses quantum dot materials (Quantum dots, QDs) as the light-emitting layer, and has incomparable advantages over other light-emitting materials, such as Controllable small size effect, ultra-high internal quantum efficiency, excellent color purity, etc., have great application prospects in the field of display technology in the future. In general, the surface of quantum dots will be connected to organic ligands by means of chelation or other means to connect inorganic ligands by forming chemical bonds. The surface ligands of quantum dots play a vital role in the synthesis of quantum dots. On the one hand, surface ligands can passivate ...

Claims

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Application Information

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IPC IPC(8): C07C323/52C07C59/255C07C69/54C07C69/78C07C69/732C07C55/32C07D239/42C07D239/48C07C217/84C07C323/34C09K11/88C09K11/02B82Y20/00H01L51/50H01L51/56
Inventor 曹蔚然杨一行向超宇钱磊梁柱荣
Owner TCL CORPORATION
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