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Quantum dots and preparation method thereof

A quantum dot and metal technology, applied in the field of nano-semiconductor material preparation, can solve the problems of poor stability of quantum dots, achieve excellent stability, improve stability, and reduce the effect of process flow

Active Publication Date: 2019-06-25
魏县聚邦新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention lies in the defect of poor stability of quantum dots in the prior art, thereby providing a quantum dot with good stability and its preparation method

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Embodiment 1

[0040] Embodiments of the present invention provide a quantum dot and a preparation method thereof. The structure of the quantum dot is as figure 1 Shown, the preparation method of this quantum dot comprises the following steps:

[0041] 1) Preparation of quantum dot core 1 solution:

[0042] (a) Weigh 5.0mmol selenium powder and 12mmol sulfur powder and place them in a conical flask, add 10mL tributylphosphine, and ultrasonically vibrate to obtain selenium-sulfur precursor solution A;

[0043] (b) Weigh 15 mmol of zinc oleate solid into 30 mL of octadecene, heat and dissolve in an inert environment to prepare precursor solution B;

[0044] (c) Weigh 1.0 mmol of cadmium oxide and 20 mmol of zinc oxide into a three-neck flask, add 40 mL of oleic acid and 60 mL of octadecene, and heat to 150°C under vacuum to obtain cadmium-zinc precursor solution C. Under the protection of nitrogen, the temperature was raised to 300°C, and solution A was injected into solution C with strong ...

Embodiment 2

[0054] Embodiments of the present invention provide a quantum dot and a preparation method thereof. The preparation method of this quantum dot comprises the steps:

[0055] 1) Preparation of quantum dot core 1 solution:

[0056] (a) Weigh 5.0mmol selenium powder and 12mmol sulfur powder and place them in a conical flask, add 10mL tributylphosphine, and ultrasonically vibrate to obtain selenium-sulfur precursor solution A;

[0057] (b) Weigh 15 mmol of zinc oleate solid into 30 mL of octadecene, heat and dissolve in an inert environment to prepare precursor solution B;

[0058] (c) Weigh 1.0 mmol of cadmium oxide and 20 mmol of zinc oxide into a three-neck flask, add 40 mL of oleic acid and 60 mL of octadecene, and heat to 150°C under vacuum to obtain cadmium-zinc precursor solution C. Under the protection of nitrogen, the temperature was raised to 300°C, and solution A was injected into solution C with strong stirring. After reacting for 10 minutes, the temperature was lower...

Embodiment 3

[0068] Embodiments of the present invention provide a quantum dot and a preparation method thereof. The preparation method of this quantum dot comprises the steps:

[0069] 1) Preparation of quantum dot core 1 solution:

[0070] (a) Weigh 5.0mmol selenium powder and 12mmol sulfur powder and place them in a conical flask, add 10mL tributylphosphine, and ultrasonically vibrate to obtain selenium-sulfur precursor solution A;

[0071] (b) Weigh 15 mmol of zinc oleate solid into 30 mL of octadecene, heat and dissolve in an inert environment to prepare precursor solution B;

[0072] (c) Weigh 1.0 mmol of cadmium oxide and 20 mmol of zinc oxide into a three-neck flask, add 40 mL of oleic acid and 60 mL of octadecene, and heat to 150°C under vacuum to obtain cadmium-zinc precursor solution C. Under the protection of nitrogen, the temperature was raised to 300°C, and solution A was injected into solution C with strong stirring. After reacting for 10 minutes, the temperature was lower...

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Abstract

The invention discloses a quantum dot and a preparation method thereof. The quantum dot comprises a quantum dot core and a plurality of quantum dot shell layers wrapping the quantum dot core. A metaloxide layer is arranged between the quantum dot core and the adjacent quantum dot shell layer. A metal oxide layer is arranged between the adjacent quantum dot shell layers or on the outermost quantumdot shell layer. According to the invention, the metal oxide layers are generated on the surfaces of the core and the shell of the quantum dot by using the precursor with an oxidation effect, so thatthe core and the shell of the quantum dot are effectively protected, erosion of moisture, oxygen and the like to the core and the shell of the quantum dot is inhibited and the stability of the quantum dot is improved. When the quantum dot film is prepared by using the quantum dot, the quantum dot film still keeps good stability in a high-temperature and high-humidity environment under the condition that a water-blocking oxygen-isolating film is not used, so that the dependence on an expensive water-blocking oxygen-isolating film is weakened, and the cost is reduced. The method has important significance for the application of the quantum dots in the fields of display, illumination and the like.

Description

technical field [0001] The invention relates to the field of preparation of nano-semiconductor materials, in particular to a quantum dot and a preparation method thereof. Background technique [0002] Quantum dots, also known as fluorescent semiconductor nanocrystals, are quasi-zero-dimensional nanomaterials because their three dimensions are all at the nanoscale. Its remarkable quantum confinement effect causes it to emit fluorescence after being excited, and the emission wavelength can be adjusted by changing the size, so that it has a continuously distributed emission spectrum. Based on the remarkable quantum effect and narrow peak width, quantum dots have broad application prospects in the fields of solar cells, display devices, lighting, and biomarkers. The world's top chemistry expert, Professor Peng Xiaogang of Zhejiang University, said that quantum dots are the best luminescent materials discovered by humans so far. At present, TV manufacturers, panel manufacturers...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/70C09K11/56C09K11/02B82Y20/00B82Y30/00
Inventor 赵治强郭海清王永红
Owner 魏县聚邦新材料科技有限公司
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