Quantum dot purification method

A purification method and technology for quantum dots, applied in the field of quantum dots, can solve the problem of inability to effectively separate quantum dot products from system impurities, and achieve the effects of easy repeatability and simple purification process.

Inactive Publication Date: 2019-07-05
SHENZHEN TCL IND RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a method for purifying quantum

Method used

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Example Embodiment

[0060] Example 1

[0061] In this embodiment, trioctylphosphine (TOP) is used to purify the quantum dot reaction system containing excess zinc oleate cation precursor, including the following steps:

[0062] (1) Provide 20 mL of quantum dot reaction system containing excess zinc oleate cation precursor after the reaction, and control the temperature from 300°C to 150°C;

[0063] (2) Add 2 mL of trioctyl phosphine to the reaction system and keep the temperature at 150°C for 15 minutes;

[0064] (3) Cool the reaction system to room temperature, then add acetone to get the precipitate and centrifuge, pour off the liquid phase, and re-disperse the solid phase obtained by centrifugation in n-hexane, then add acetone to re-precipitate and centrifuge, and repeat 5 times. Obtain high-purity quantum dot samples.

Example Embodiment

[0065] Example 2

[0066] This embodiment uses octadecylphosphonic acid to purify the quantum dot solution containing excess zinc oleate cation precursor, including the following steps:

[0067] (1) Under the protection of an inert atmosphere, take 15 mL of the n-hexane solution of quantum dots containing excess zinc oleate cation precursor and inject it into a three-necked flask containing 15 mL of octadecene;

[0068] (2) Heat the solution system in the three-necked flask to 80°C and maintain it for 30mins to completely remove the n-hexane in the solution system; continue to heat the solution system to 320°C, add 10mL octadecylphosphonic acid to the solution system, and keep it React at 320℃ for 1mins;

[0069] (3) After cooling the reaction system to room temperature, add acetone to get the precipitate and centrifuge to separate, pour off the liquid phase and re-disperse the solid phase obtained by centrifugation in n-hexane, then add acetone to re-precipitate and centrifuge, repea...

Example Embodiment

[0070] Example 3

[0071] This embodiment uses tributyl phosphine to purify the quantum dot reaction system containing excess Se-TOP anion precursor, including the following steps:

[0072] (1) Provide 20 mL of quantum dot reaction system containing excess Se-TOP anion precursor after the reaction, and control the temperature from 300°C to 150°C;

[0073] (2) Add 0.2 mL of tributyl phosphine to the reaction system, stir and react for 12 hours under a nitrogen atmosphere at room temperature;

[0074] (3) After cooling the reaction system to room temperature, perform conventional precipitation and centrifugal separation and purification: add acetone to obtain the precipitate and then centrifuge, pour off the liquid phase and re-disperse the solid phase obtained by centrifugation in n-hexane, and then add acetone to re-precipitate and centrifuge. This reciprocating 5 times can obtain a high-purity quantum dot sample.

[0075] In summary, the present invention provides a method for purifyi...

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Abstract

The invention discloses a quantum dot purification method. The method includes the steps of: providing a quantum dot solution containing an ion precursor; mixing an organic phosphine compound with thequantum dot solution containing the ion precursor to react the organic phosphine compound with the ion precursor in the quantum dot solution; and adding a precipitant at the end of the reaction, andtaking the solid phase, thus obtaining the quantum dot. The method provided by the invention can effectively remove a large number of residual cationic precursors in the quantum dot solution completely. More importantly, the optical properties of the quantum dot itself do not change significantly. The method has the characteristics of simple purification process and easily repeatable operation, solves the shortcomings of quantum dot related applications in the prior art, and provides more possibilities for preparation of high-efficiency QLED devices.

Description

technical field [0001] The invention relates to the field of quantum dots, in particular to a method for purifying quantum dots. Background technique [0002] The remarkable quantum confinement effect of quantum dots makes it have many unique nanometer properties such as continuously adjustable emission wavelength, narrow emission wavelength, wide absorption spectrum, high luminous intensity and long fluorescence lifetime. These characteristics make quantum dots in flat panel display, solid state lighting , Photovoltaic solar energy and other optoelectronic fields have broad application prospects. [0003] As we all know, in optoelectronic devices such as semiconductor display devices, lighting devices and solar devices, the purity requirements of optoelectronic materials are very high. The introduction of trace impurities will not only affect the optical and electrical characteristics of optoelectronic materials themselves, but also affect the overall optoelectronic devices...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/54C09K11/56C09K11/66C09K11/70C09K11/74C09K11/88B82Y20/00B82Y40/00B82Y30/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/02C09K11/54C09K11/565C09K11/661C09K11/70C09K11/7492C09K11/881C09K11/883
Inventor 杨一行
Owner SHENZHEN TCL IND RES INST
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