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ZnMgO-based resistive random access memory and preparation method thereof

A technology of resistive memory and resistive layer, applied in electrical components and other directions, can solve the problems of high working voltage, insufficient switching ratio and anti-fatigue characteristics, and achieve the effects of low working voltage, high visible light transmittance and excellent performance

Inactive Publication Date: 2019-07-05
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a ZnMgO-based resistive variable memory and its preparation method to solve the problems of relatively high operating voltage, switching ratio and fatigue resistance when the doped ZnO material disclosed in the prior art is applied to the resistive variable memory. The problem of lack of features

Method used

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  • ZnMgO-based resistive random access memory and preparation method thereof
  • ZnMgO-based resistive random access memory and preparation method thereof
  • ZnMgO-based resistive random access memory and preparation method thereof

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Embodiment 1

[0033] A resistive variable memory based on ZnMgO comprises a substrate, a bottom electrode, a resistive variable layer and a top electrode from bottom to top. Wherein, the substrate is quartz glass, the bottom electrode is ITO, the resistive layer is ZnMgO thin film, wherein the atomic ratio of Mg to Zn is 1:3.23, and the top electrode is Al.

[0034] The above-mentioned preparation method of a ZnMgO-based RRAM comprises the following steps:

[0035] (1) Clean the ITO conductive glass. Place the ITO conductive glass in acetone, absolute ethanol, and deionized water for ultrasonic cleaning for 6 minutes, repeat the above steps twice until the membrane surface is cleaned, and then dry it with nitrogen gas for use.

[0036] (2) Preparation of ZnMgO thin film. The ZnO target with a purity of 99.99% is placed on the RF target, the Mg target with a purity of 99.99% is placed on the DC target, the cleaned ITO conductive glass is fixed on the sample stage, and the cavity is evacuat...

Embodiment 2

[0039] A resistive variable memory based on ZnMgO comprises a substrate, a bottom electrode, a resistive variable layer and a top electrode from bottom to top. Wherein, the substrate is quartz glass, the bottom electrode is ITO, the resistive layer is ZnMgO thin film, wherein the atomic ratio of Mg to Zn is 1:3.23, and the top electrode is Al.

[0040] The above-mentioned preparation method of a ZnMgO-based RRAM comprises the following steps:

[0041] (1) Clean the ITO conductive glass. Place the ITO conductive glass in acetone, absolute ethanol, and deionized water for ultrasonic cleaning for 6 minutes, repeat the above steps twice until the membrane surface is cleaned, and then dry it with nitrogen gas for use.

[0042] (2) Preparation of ZnMgO thin film. The ZnO target with a purity of 99.99% is placed on the RF target, the Mg target with a purity of 99.99% is placed on the DC target, the cleaned ITO conductive glass is fixed on the sample stage, and the cavity is evacuat...

Embodiment 3

[0045] A resistive variable memory based on ZnMgO comprises a substrate, a bottom electrode, a resistive variable layer and a top electrode from bottom to top. Wherein, the substrate is quartz glass, the bottom electrode is ITO, the resistive layer is ZnMgO thin film, wherein the atomic ratio of Mg to Zn is 1:3.23, and the top electrode is Al.

[0046] The above-mentioned preparation method of a ZnMgO-based RRAM comprises the following steps:

[0047] (1) Clean the ITO conductive glass. Place the ITO conductive glass in acetone, absolute ethanol, and deionized water for ultrasonic cleaning for 6 minutes, repeat the above steps twice until the membrane surface is cleaned, and then dry it with nitrogen gas for use.

[0048] (2) Preparation of ZnMgO thin film. The ZnO target with a purity of 99.99% is placed on the RF target, the Mg target with a purity of 99.99% is placed on the DC target, the cleaned ITO conductive glass is fixed on the sample stage, and the cavity is evacuat...

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Abstract

The invention discloses a ZnMgO-based resistive random access memory and a preparation method thereof, and solves the problems that when a doped ZnO material disclosed in the prior art is applied to the resistive random access memory, the working voltage is relatively high, and the switching ratio and the anti-fatigue property are insufficient. The ZnMgO-based resistive random access memory comprises a substrate, a bottom electrode, a resistive layer and a top electrode which are sequentially arranged from bottom to top, wherein the bottom electrode is an ITO conducting layer, the resistive layer is a ZnMgO film, and the top electrode is an Al layer; and the atomic ratio of Mg to Zn in the ZnMgO film is 1:3.23. The ZnMgO-based resistive random access memory shows typical bipolar resistancechange characteristics, the working voltage is relatively low, the switch specific performance is excellent, the initial cycle reaches about 106, and the anti-fatigue characteristic is relatively stable.

Description

technical field [0001] The invention relates to the technical field of semiconductor storage, in particular to a ZnMgO-based resistive memory and a preparation method thereof. Background technique [0002] With the rapid popularization of portable electronic products, the requirements for the integration of storage circuits are getting higher and higher, and the existing floating gate storage devices have developed into a bottleneck period and encounter huge challenges. The development of new non-volatile memory with excellent performance, such as phase change memory, ferroelectric memory, magnetoresistive memory and resistive memory, has become a research hotspot in the semiconductor industry. Among them, resistive memory (RRAM) has a simple structure, fast read and write speed, With the advantages of high storage density, low energy consumption, good stability and compatibility, it is very likely to become the next generation of general-purpose memory. [0003] Resistive ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/00
Inventor 戴丽萍申野张国俊王姝娅钟志亲
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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