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A znmgo-based resistive memory and preparation method thereof

A resistive memory and resistive layer technology, applied in electrical components and other directions, can solve the problems of high working voltage, insufficient switching ratio and anti-fatigue characteristics, and achieve the effects of low working voltage, industrialization development, and excellent performance.

Inactive Publication Date: 2021-03-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a ZnMgO-based resistive variable memory and its preparation method to solve the problems of relatively high operating voltage, switching ratio and fatigue resistance when the doped ZnO material disclosed in the prior art is applied to the resistive variable memory. The problem of lack of features

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  • A znmgo-based resistive memory and preparation method thereof
  • A znmgo-based resistive memory and preparation method thereof
  • A znmgo-based resistive memory and preparation method thereof

Examples

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Embodiment 1

[0033] A resistive variable memory based on ZnMgO comprises a substrate, a bottom electrode, a resistive variable layer and a top electrode from bottom to top. Wherein, the substrate is quartz glass, the bottom electrode is ITO, the resistive layer is ZnMgO thin film, wherein the atomic ratio of Mg to Zn is 1:3.23, and the top electrode is Al.

[0034] The above-mentioned preparation method of a ZnMgO-based RRAM comprises the following steps:

[0035] (1) Clean the ITO conductive glass. Place the ITO conductive glass in acetone, absolute ethanol, and deionized water for ultrasonic cleaning for 6 minutes, repeat the above steps twice until the membrane surface is cleaned, and then dry it with nitrogen gas for use.

[0036] (2) Preparation of ZnMgO thin film. The ZnO target with a purity of 99.99% is placed on the RF target, the Mg target with a purity of 99.99% is placed on the DC target, the cleaned ITO conductive glass is fixed on the sample stage, and the cavity is evacuat...

Embodiment 2

[0039] A resistive variable memory based on ZnMgO comprises a substrate, a bottom electrode, a resistive variable layer and a top electrode from bottom to top. Wherein, the substrate is quartz glass, the bottom electrode is ITO, the resistive layer is ZnMgO thin film, wherein the atomic ratio of Mg to Zn is 1:3.23, and the top electrode is Al.

[0040] The above-mentioned preparation method of a ZnMgO-based RRAM comprises the following steps:

[0041] (1) Clean the ITO conductive glass. Place the ITO conductive glass in acetone, absolute ethanol, and deionized water for ultrasonic cleaning for 6 minutes, repeat the above steps twice until the membrane surface is cleaned, and then dry it with nitrogen gas for use.

[0042] (2) Preparation of ZnMgO thin film. The ZnO target with a purity of 99.99% is placed on the RF target, the Mg target with a purity of 99.99% is placed on the DC target, the cleaned ITO conductive glass is fixed on the sample stage, and the cavity is evacuat...

Embodiment 3

[0045] A resistive variable memory based on ZnMgO comprises a substrate, a bottom electrode, a resistive variable layer and a top electrode from bottom to top. Wherein, the substrate is quartz glass, the bottom electrode is ITO, the resistive layer is ZnMgO thin film, wherein the atomic ratio of Mg to Zn is 1:3.23, and the top electrode is Al.

[0046] The above-mentioned preparation method of a ZnMgO-based RRAM comprises the following steps:

[0047] (1) Clean the ITO conductive glass. Place the ITO conductive glass in acetone, absolute ethanol, and deionized water for ultrasonic cleaning for 6 minutes, repeat the above steps twice until the membrane surface is cleaned, and then dry it with nitrogen gas for use.

[0048] (2) Preparation of ZnMgO thin film. The ZnO target with a purity of 99.99% is placed on the RF target, the Mg target with a purity of 99.99% is placed on the DC target, the cleaned ITO conductive glass is fixed on the sample stage, and the cavity is evacuat...

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Abstract

The invention discloses a resistive variable memory based on ZnMgO and a preparation method thereof, which solves the problem that the doped ZnO material disclosed in the prior art is applied to the resistive variable memory and still has relatively high operating voltage, switching ratio and anti-fatigue characteristics Insufficient problem. A ZnMgO-based resistive variable memory in the present invention comprises a substrate, a bottom electrode, a resistive variable layer and a top electrode arranged sequentially from bottom to top, the bottom electrode is an ITO conductive layer, and the resistive variable layer is a ZnMgO thin film, The top electrode is an Al layer; the atomic ratio of Mg to Zn in the ZnMgO film is 1:3.23. The invention exhibits typical bipolar resistive switching characteristics, relatively low operating voltage, excellent on-off ratio performance, reaching 10 in the initial cycle 6 Left and right, the anti-fatigue properties are relatively stable.

Description

technical field [0001] The invention relates to the technical field of semiconductor storage, in particular to a ZnMgO-based resistive memory and a preparation method thereof. Background technique [0002] With the rapid popularization of portable electronic products, the requirements for the integration of storage circuits are getting higher and higher, and the existing floating gate storage devices have developed into a bottleneck period and encounter huge challenges. The development of new non-volatile memory with excellent performance, such as phase change memory, ferroelectric memory, magnetoresistive memory and resistive memory, has become a research hotspot in the semiconductor industry. Among them, resistive memory (RRAM) has a simple structure, fast read and write speed, With the advantages of high storage density, low energy consumption, good stability and compatibility, it is very likely to become the next generation of general-purpose memory. [0003] Resistive ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/00
Inventor 戴丽萍申野张国俊王姝娅钟志亲
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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