Preparation method of anisotropic stacked graphene

Abstract

The invention discloses a preparation method of anisotropic stacked graphene. The preparation method comprises the following steps: preparing an insulating or semiconductor substrate; preparing a nickel layer and a doped carbon source layer which are distributed in a layered manner on the surface of the substrate, and enabling the nickel layer to be in direct contact with the doped carbon source layer; heating the doped carbon source layer to fuse carbon into the nickel layer, then conducting cooling to grow doped graphene on one side of the nickel layer and grown pure graphene on the other side of the nickel layer; and annealing and evaporating the nickel layer, so as to enable the doped graphene and the pure graphene to be distributed in a layered manner and be in contact with each other. The layered doped graphene and pure graphene grow on the insulating or semiconductor substrate, so that a subsequent transfer step is avoided, and the doped graphene and the pure graphene are prevented from being damaged.

Description

[0001] 【Technical field】 [0002] The invention relates to a preparation method of heterosexually stacked graphene, which belongs to the field of graphene production. [0003] 【Background technique】 [0004] In 2004, two scientists from the University of Manchester in the United Kingdom discovered graphene using the method of micromechanical exfoliation, and won the Nobel Prize in Physics in 2010. Graphene is carbon atoms through sp 2 A new two-dimensional honeycomb carbonaceous material that is closely arranged in a regular hexagon by hybridization, and the thickness of a single layer is only 0.335nm. In theory, graphene exhibits excellent electronic stability, thermal conductivity, optical properties, mechanical properties, etc. Since the discovery of graphene, due to its excellent performance and huge market application prospects, it has triggered a research boom in the fields of physics and material science. Graphene is currently the thinnest and hardest nanomaterial. It...

AI Technical Summary

Problems solved by technology

[0005] The preparation methods of graphene include chemical vapor deposition method, redox method, liquid phase exfoliation method and mechanical exfoliation method, etc., but these methods have complex processes, difficult control of process conditions, high requirements for substrates, poor repeatability, and pollution. And other shortcomings, not conducive to the industrial production of graphene

The chemical vapor deposition method is one of the most conventional methods. This traditional preparation method inevitably requires subsequent transfer. During the transfer process, impurities, defects and pollution will inevitably be introduced, causing damage and fracture, and reducing the stability of graphene. , electrical properties, etc., which will affect the subsequent device application preparation; at the same time, there is a lack of precise control over the number of graphene layers and stacking methods, especially the control over the doping of foreign heteroatoms into the graphene lattice structure. its difficult

Images