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B-site doped bismuth ferrite solid solution film as well as preparation method and application thereof

A technology for preparing bismuth ferrite and thin film, which is applied in the field of B-site doped bismuth ferrite solid solution thin film and its preparation, can solve the problems of substrate-free epitaxy, the surface cannot achieve no grain boundary and high flatness, and the like, Achieving the effect of good high-voltage electrical properties

Active Publication Date: 2019-07-09
SHENZHEN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current method of sol-gel preparation of multiferroic films at room temperature is used to prepare films as bismuth ferrite polycrystalline films without the piezoelectric enhancement effect brought about by the quasi-isotropic phase boundary stoichiometry, or without substrate epitaxy, or surface Unable to achieve no grain boundary and high flatness

Method used

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  • B-site doped bismuth ferrite solid solution film as well as preparation method and application thereof
  • B-site doped bismuth ferrite solid solution film as well as preparation method and application thereof
  • B-site doped bismuth ferrite solid solution film as well as preparation method and application thereof

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preparation example Construction

[0025] The invention provides a method for preparing a B-site-doped bismuth ferrite solid solution film, which is improved on the basis of the traditional film preparation method of bismuth ferrite sol-gel, and the method steps include:

[0026] S10, preparing a B-site doped bismuth ferrite solid solution sol;

[0027] S20, coating the bismuth ferrite solid solution sol in step S10 on the substrate to form a sol coating;

[0028] S30, heat-setting the sol coating;

[0029] S40, annealing the sol coating after the thermosetting treatment; wherein, during the annealing process, rapid heating and slow cooling are used to control the quality of the film;

[0030] S50, the substrate is peeled off to obtain the B-site doped bismuth ferrite solid solution thin film prepared in the present invention.

[0031] In the implementation of the above steps of the present invention, firstly, the piezoelectric enhancement effect of the quasi-isotype phase boundary is obtained by B-site dopin...

Embodiment 1

[0056] In this embodiment 1, the following detailed steps are adopted to prepare the film:

[0057] S11, according to 0.3mol / L 100mL(1-x)BiTi (1-y) / 2 Fe y Mg (1-y) / 2 o 3 -xCaTiO 3 (x=0.15, y=0.8) the amount of sol preparation calculation, use the following table to obtain raw materials:

[0058] Drug Name molecular weight Drug purity Experimental ratio stoichiometric number Weighing quality Bismuth nitrate (pentahydrate) 485.07 0.98 1.1 0.85 13.8839g Ferric nitrate (nonahydrate) 404.02 0.985 1 0.544 8.3675g Magnesium nitrate (hexahydrate) 256.41 0.99 1 0.085 0.6605g Calcium acetate (monohydrate) 176.18 0.99 1 0.15 0.8008g Titanium tetraisopropoxide 340.32 0.99 1 0.235 2.4235g Citric acid (monohydrate) 210.14 0.995 1 1 6.3359g Ethylene glycol monomethyl ether 76.09 >0.99 - - - propionic anhydride 130.14 >0.985 - - -

[0059] S12, dissolving Bi, Fe, Mg, and Ca salts in 50 ...

Embodiment 2

[0080] In this embodiment 2, the following detailed steps are adopted to prepare the film:

[0081] S10, according to (1-x)BiTi (1-y) / 2 Fe y Mg (1-y) / 2 o 3 -xCaTiO 3 (x=0.1, y=0.7) After calculating and obtaining the amounts of each material, a 0.3mol / L 100mL sol was prepared according to the steps in Example 2.

[0082] S21, select an LSMO substrate with a size of 5*5*1mm;

[0083] S22, cleaning the substrate in step S21 in an oxygen plasma cleaning machine for 90s;

[0084] S23, placing the substrate cleaned in step S22 on a coater, and then vacuuming and fixing the substrate;

[0085] S24, adding the sol prepared in step S10 onto the substrate by static dropwise addition;

[0086] S25, press the program start key of the glue homogenizer to start spin coating; the process of spin coating is set as:

[0087]

[0088]

[0089] S26, after the glue leveling process of the glue leveler stops, the vacuum is released, and the sample is removed.

[0090] S31, transfer...

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Abstract

The invention discloses a B-site doped bismuth ferrite solid solution film as well as a preparation method and application thereof. The preparation method comprises the following steps: preparing a B-site doped bismuth ferrite solid solution sol; coating a substrate with the solid solution sol to form a sol coating; carrying out thermosetting treatment on the sol coating on the substrate; carryingout annealing treatment on the sol coating subjected to thermosetting treatment, wherein in the annealing treatment, rapid heating and warm preservation are performed for improving the surface flatness of a thin film and controlling and improving the crystallinity of the material, and then slow cooling is carried out for promoting the film to form out-of-plane single domains. According to the method disclosed by the invention, a traditional bismuth ferrite sol-gel thin film preparation technology is improved, and a quasi-homogeneous phase boundary piezoelectric enhancement effect is obtainedthrough B-site doping and mixing with calcium titanate; and by adjusting the annealing process, the prepared high-quality epitaxial room-temperature multiferroic film has good high-voltage electric property, room-temperature multiferroic property and single crystal epitaxy.

Description

technical field [0001] The invention relates to the technical field of preparation of magnetoelectric coupling materials, in particular to a B-site-doped bismuth ferrite solid solution thin film and a preparation method and application thereof. Background technique [0002] Multiferroic materials have both ferroelectricity and ferromagnetism. They are multifunctional magnetoelectric composite materials. , can control electric polarization by magnetic field or control magnetic pole by electric field; therefore it is the technical core of many electronic devices and sensors. The more common multiferroic materials such as TMO (TbMnO3, terbium manganate) and BFO (BiFeO3, bismuth ferrite) have very good properties. At the same time, they also have their own shortcomings; for example, the temperature of the magnetoelectric coupling phenomenon in the TMO system is much lower than room temperature, and its novel ferroelectricity is rarely achieved in terms of strength; BFO is not a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/26C04B35/624
CPCC04B35/2691C04B35/624C04B2235/3236C04B2235/443C04B2235/449
Inventor 刘聪贾婷婷谢淑红欧云
Owner SHENZHEN INST OF ADVANCED TECH
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