Method for preparing CdZnSe/CdSe/ZnSe green light quantum point

A technology of quantum dots and green light, applied in the field of luminescent materials, can solve the problems of limiting the flexibility of structure adjustment, achieve the effects of reducing non-radiative transitions, novel structures, and improving luminescent performance

Active Publication Date: 2019-07-19
NANCHANG HANGKONG UNIVERSITY
View PDF9 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The study found that the control scale of single core-shell structure quantum dots has certain limitations, and the ubiquitous core-shell structure is two binary semiconductor materials, which also limits the flexibility of structure adjustment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] CdZnSe / CdSe / ZnSe quantum dot preparation method obtains the steps specifically as follows:

[0031] Step 1: Synthesis of CdZnSe quantum dots

[0032] CdZnSe quantum dots were synthesized by high-temperature hot injection method; CdO and ZnO were used as raw materials, and ZnO was excessive; 0.5 mmol CdO and 5 mmol ZnO were added to a three-necked flask, and then 4 ml of oleic acid OA and 6 ml of octadecene ODE were added for 20 min Internally raise the temperature to 130°C, the system is accompanied by vacuuming during the heating process, and then continue to vacuumize at 130°C for 30 minutes, then heat up to 300°C under an inert gas environment, inject 1 mmol Se-ODE dispersion liquid, and keep warm for 10 minutes After finishing the reaction, CdZnSe quantum dots are obtained.

[0033] Step 2: Purification of CdZnSe quantum dots

[0034]Add an appropriate amount of normal hexane to the prepared CdZnSe quantum dots, then place them in a centrifuge tube, remove the pre...

Embodiment 2

[0044] CdZnSe / CdSe / ZnSe quantum dot preparation method obtains the steps specifically as follows:

[0045] Step 1: Synthesis of CdZnSe quantum dots

[0046] CdZnSe quantum dots were synthesized by high-temperature hot injection method; CdO and ZnO were used as raw materials, and ZnO was excessive; 0.5 mmol CdO and 5 mmol ZnO were added to a three-necked flask, and then 4 ml of oleic acid OA and 6 ml of octadecene ODE were added for 20 min Internally raise the temperature to 130°C, the system is accompanied by vacuuming during the heating process, and then continue to vacuumize at 130°C for 30 minutes, then heat up to 300°C under an inert gas environment, inject 1 mmol Se-ODE dispersion liquid, and keep warm for 10 minutes Finally, the reaction is terminated to obtain CdZnSe quantum dots;

[0047] Step 2: Purification of CdZnSe quantum dots

[0048] Add an appropriate amount of normal hexane to the prepared CdZnSe quantum dots, then place them in a centrifuge tube, remove the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method for preparing a CdZnSe/CdSe/ZnSe green light quantum point. Specifically, a precursor high-temperature injection method and a growth method are combined, the ratio of Zn to Cd in CdZnSe is adjusted, then core quantum dots of different and uniform sizes can be prepared, later cores are coated with a thin CdSe shell layer, then a light emission wavelength is approximate to 550nm, in addition, by controlling reaction velocities and temperatures, quantum point size uniformity can be ensured, finally ZnS is adopted as the shell layer for surface modification, light emission wavelengths are regulated and controlled, and the wavelength of the CdZnSe/CdSe/ZnSe quantum point is about 540nm. The CdZnSe/CdSe/ZnSe green light quantum point prepared by using the method has a fluorescence quantum yield of 90%, has a full width at half maximum of 30nm, has a great application prospect in efficient quantum point light emitting diodes, and is capable of remarkably improving photoelectric properties of light emitting diodes.

Description

technical field [0001] The invention relates to a method for preparing CdZnSe / CdSe / ZnSe green light quantum dots, and specifically belongs to the technical field of luminescent materials. Background technique [0002] Quantum dots (Quantum dots, QDs), also known as semiconductor nanocrystals, are subject to quantum confinement effects in three dimensions, making their three-dimensional dimensions between 1-100 nm, belonging to the quasi-zero-dimensional category. The radius of the quantum dot is very close to or even smaller than the exciton Bohr radius of the corresponding bulk material, so the existence of the quantum confinement effect makes its energy band structure gradually evolve from quasi-continuous to molecular-like discrete energy levels, corresponding to The bandgap changes, accompanied by a shift in the emission wavelength. According to this feature, we can accurately obtain quantum dots with different luminescent wavelengths by changing the size of quantum dot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y30/00
CPCC09K11/883C09K11/02B82Y20/00B82Y30/00
Inventor 张芹白锦科杨文学赵文天张余宝黎芳芳秦元成
Owner NANCHANG HANGKONG UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap