The invention provides a method for preparing a CdZnSe/CdSe/ZnSe green light quantum point. Specifically, a precursor high-temperature injection method and a growth method are combined, the ratio of Zn to Cd in CdZnSe is adjusted, then core quantum dots of different and uniform sizes can be prepared, later cores are coated with a thin CdSe shell layer, then a light emission wavelength is approximate to 550nm, in addition, by controlling reaction velocities and temperatures, quantum point size uniformity can be ensured, finally ZnS is adopted as the shell layer for surface modification, light emission wavelengths are regulated and controlled, and the wavelength of the CdZnSe/CdSe/ZnSe quantum point is about 540nm. The CdZnSe/CdSe/ZnSe green light quantum point prepared by using the method has a fluorescence quantum yield of 90%, has a full width at half maximum of 30nm, has a great application prospect in efficient quantum point light emitting diodes, and is capable of remarkably improving photoelectric properties of light emitting diodes.