42results about How to "Solving Mismatch Problems" patented technology

The invention discloses an exoskeleton type upper limb rehabilitation training robot, which includes a base, two mechanical arm assemblies and six motor drive assemblies; the base includes a mobile base, an electrical box, an electric lifting column, a base platform, Motor mounting angle bracket, base rotating motor, coupling, base main bearing seat, base ball screw nut assembly, base nut seat, base common sub-bearing seat, right bracket, base linear guide assembly and left Bracket; the mechanical arm assembly includes a mechanical shoulder belt assembly, a mechanical shoulder joint assembly, a mechanical elbow joint assembly, a mechanical forearm assembly, a mechanical wrist joint assembly, and a mechanical hand assembly; the motor drive assembly includes a motor and a deceleration assembly, a torque sensor assembly and The transmission assembly, the motor and deceleration assembly, the torque sensor assembly and the transmission assembly are all mounted on the same motor-driven base frame. The invention can be worn on the upper limbs of the human body, and can be used to assist the upper limbs of the human body to move in three-dimensional space and carry out rehabilitation training.

The invention provides a cadmium-free core-shell quantum dot and a preparation method thereof; the cadmium-free core-shell quantum dot comprises a quantum dot core, a gradual transition layer continuously grown on the surface of the quantum dot core, and a shell layer formed on the surface of the gradual transition layer, wherein the gradual transition layer comprises core cations and core anions in the quantum dot core, and shell cations and shell anions in the shell layer; in the cadmium-free core-shell quantum dot, the concentrations of the core cations and core anions decrease gradually from inside to outside, and the concentrations of the shell cations and shell anions gradually increase from inside to outside.

The invention relates to a batch-to-batch optimization method of a batch process by combining a medium-term correction strategy. The method comprises the following steps: firstly establishing a quality variable predictive model of an NLPLS, and carrying out prediction on final product quality according to control operation variables of the process; on the basis of the model, calculating an optimal control strategy and implementing the optimal control strategy on a practical device; adopting a recurrence algorithm to carry out updating on the original NLPLS model according the newly-obtained data and old model parameters after each batch is finished; then solving the optimal control strategy again and implementing the optimal control strategy on an object; generally, after several batches, leading the control strategy to converge a satisfactory solution; and simultaneously, in order to process the interference in batches, adopting the medium-term correction strategy, utilizing new information obtained by the current batch to carry out correction on the latter control strategy. The method combines the batch-to-batch optimization and the medium-term correction strategy, makes up the insufficiency that the traditional batch-to-batch optimization method can not process the interference in batches and improves the control performance.

The invention discloses a method of forming a FinFET gate medium layer and a method of forming a FinFET. After monocrystal silicon is formed in an epitaxial manner on the surface of a semiconductor fin object, and a semiconductor substrate is annealed under a condition of mixed gas including deuterium and inert gas so that a transition layer is obtained. Therefore, problems of crystal lattice mismatch between a gate medium layer and the semiconductor fin object are solved. Moreover, the surface of the semiconductor fin object is reduced in roughness, a charge trapping center is prevented from forming, and then the performance of a semiconductor device is improved.

The invention discloses a high-resolution accurate two-dimensional direction-of-arrival estimation method based on planar co-prime array virtual domain tensor spatial spectrum search, and mainly solves the problems of signal multi-dimensional information loss and spatial spectrum resolution and accuracy limitation in the existing method. The method comprises the following implementation steps: constructing a planar co-prime array; modeling a receiving signal tensor of the planar co-prime array; deriving a virtual domain equivalent signal based on a planar co-prime array second-order mutual correlation tensor; constructing an equivalent received signal of a virtual domain uniform area array; deriving a fourth-order autocorrelation tensor of the virtual domain smooth signal; realizing signaland noise subspace classification based on multi-dimensional feature extraction of a virtual domain autocorrelation tensor; and high-resolution accurate two-dimensional direction-of-arrival estimation based on virtual domain tensor spatial spectrum search. According to the method, high-resolution accurate two-dimensional direction-of-arrival estimation based on tensor spatial spectrum search is realized on the basis of multi-dimensional feature extraction of virtual domain tensor statistics of the planar co-prime array, and the method can be used for passive detection and target positioning.

The invention discloses a target scattering center extraction method by combining image segmentation with subspace matching pursuit, and mainly solves a problem of inaccurate parameter estimation caused by a big coupling degree between a scattering center category discrimination error and a scattering center of a traditional attribute scattering center method. The implementation processes of the target scattering center extraction method comprises the following steps: 1) on the basis of an attribute scattering center model, constructing a redundant dictionary of an attribute scattering center; 2) on the basis of target frequency domain observation data, combining a threshold segmentation image segmentation method with a subspace matching pursuit method to solve sparse representation observed by a target in a frequency domain; and 3) according to the redundant dictionary of the attribute scattering center and the sparse representation observed by the target in the frequency domain, extracting a target attribute scattering center parameter. A target attribute scattering center can be effectively extracted, the geometric dimensions of the target and important components thereof can be precisely estimated, and the invention can be used for the classification and identification of a radar target.

This invention is a method for realizing low temperature deposition of gallium nitride film on a silicon substrate, including following steps: 1) diagnosing the space distribution of an ECR plasma; 2) processing emission spectrum analysis to the group of the ECR plasma; 3) firstly depositing a layer of TiN transition layer on the silicon substrate; 4) preparing an A1N transition layer doped with gradually changed structure on the silicon substrate; 5) preparing a GaN cushion layer doped with gradually changed structure on the TiN transition layer, and externally extending to grow a crystal GaN film under low temperature on the GaN cushion layer doped with the gradually changed structure; depositing a GaN film under lower temperature on the A1N transition layer. This invention has excellent practicability and better guarantees the high quality of the GaN film through depositing the GaN film under low temperature.

The invention provides a fuzzy predictive control method capable of enhancing robustness based on a disturbance observer. The method comprises the following steps: 1) establishing a discrete fuzzy disturbance observer model, an auxiliary controller and a robust predictive controller; 2) solving a feedback gain of the auxiliary controller and a gain of the disturbance observer to obtain a minimum robust invariant set, and calculating a tight constraint set of control input and state variable of the robust predictive controller; 3) initializing the system state variable and assigning a value tothe state variable of a nominal model; 4) for the current nominal model state variable, solving the optimization problem that minimizes the upper bound gamma of predictive control performance, and obtaining a current disturbance estimated value; 5) calculating control input of the system and applying the control input to a controlled object; 6) applying the control input of a nominal system to thenominal model and calculating output of the current state and current state quantity output of a sampling system; and 7) performing substituting and setting k=k+1, and then, skipping to the step 4).The stability of a predictive control system is improved.

The invention relates to a weak target detection tracking method based on a mixed coordinate pseudo-spectrum technology. The method comprises the steps of obtaining radar echo data; setting the widthand the number of speed filters; converting the resolution unit in the polar coordinate system into a Cartesian coordinate system to obtain a predicted Cartesian position of the resolution unit in thelast frame, and converting the predicted Cartesian position of the resolution unit into the polar coordinate system to obtain a predicted position of the resolution unit in the polar coordinate system; for each speed filter, constructing a pseudo spectrum according to the prediction position, and accumulating the intensity of each frame of pseudo spectrum to obtain a space domain accumulation plane and a speed domain plane of the speed filter; according to a preset detection threshold, judging whether a peak value accumulated by a speed filter is greater than the detection threshold, obtaining a spatial waveform and a speed dimension waveform after target multi-frame accumulation, and estimating a polar coordinate position and a Cartesian speed of the target; carrying out track backtracking; and outputting results. The method solves the problem that a traditional pre-detection tracking method cannot well process radar polar coordinate system data.

The invention discloses a time domain interleaved analog-to-digital converter and electronic equipment. The time domain interleaved analog-to-digital converter comprises a plurality of sub ADC converters arranged in parallel, a reference ADC converter and a plurality of calibration modules, wherein the plurality of calibration modules are connected with the plurality of sub ADC converters one by one; multiple sub ADC channels are formed, the reference ADC converter converts analog signals sampled by the sub ADC converters into reference digital signals at the same time and outputs the reference digital signals to the corresponding calibration modules, each calibration module carries out self-calibration work according to the received digital signal and the corresponding reference digital signal; and the sampling time of the reference ADC is enabled to be continuously aligned with the sampling time of each sub ADC converter by controlling a clock signal, so that each calibration moduleperforms self-calibration in a loop iteration manner, the transmission characteristics of each sub ADC channel are infinitely close to the transmission characteristics of the reference ADC converter,and the problem of mismatch among the sub ADC channels is solved.

The invention discloses a method for reducing the defect density of a gallium nitride nanowire array crystal, and belongs to the semiconductor and nanometer technical fields. The method comprises the steps of introducing a barrier layer unmatched with the crystal lattice of a substrate between the growth substrate and an initial buffer layer, wherein the barrier layer is used for stopping defects diffusing from the substrate to the inner part of the gallium nitride nanowire array crystal; and then by adopting a self-assembly technology and a homogeneity epitaxy growth technology, forming a gallium nitride buffer layer on the surface of the buffer layer, realizing homogeneity epitaxy growth, and forming the gallium nitride nanowire array crystal. By adopting the method, the defects are prevented from spreading from the substrate to the inner part of the surface crystal, so that relatively strong intrinsic band gap luminescence and extremely weak defect luminescence of a gallium nitride semiconductor material is ensured, and the requirements of a semiconductor device to the material crystal defect density are achieved.

The invention relates to a GaN film and a preparation method thereof. The GaN film comprises a Si substrate and a patterned SiO2 mask layer located on the Si substrate, a Si3N4 buffer layer is arranged on the Si {111} crystal face of the Si substrate, and a sputtered SiO2 film is arranged on the SiO2 mask layer and the Si3N4 buffer layer which does not participate in GaN growth. A GaN insertion layer is arranged on the Si3N4 buffer layer participating in GaN growth, and a GaN film layer grows on the GaN insertion layer. The GaN film provided by the invention is prepared by a method of epitaxially growing a non-polar GaN film on the Si patterned substrate, is low in cost and excellent in performance, and can be widely applied to manufacturing of devices.

The invention discloses an antenna matching device. The antenna matching device comprises a measuring circuit which is connected with an antenna and used for obtaining the mode and the phase of the complex reflection coefficient of the antenna, calculating the mode and the phase of the complex reflection coefficient to obtain the complex impedance of the antenna and outputting the complex impedance; a matching circuit which is connected between the measuring circuit and the antenna and stores a corresponding relation between complex impedance and an area, wherein the matching circuit receivesthe complex impedance output by the measuring circuit and finds out an area corresponding to the received complex impedance according to the stored corresponding relation between the complex impedanceand the area and adjusts the parameters of the area to enable the antenna to be matched with a transmitter or a receiver, so as to solve the problems of mismatch between the antenna and the radio frequency front end and port standing wave difference, and achieve the purposes of accurately measuring the tuning impedance, shortening the tuning time and meeting the frequency hopping requirement.

The invention discloses a gallium oxide film and a heteroepitaxial growth method and application thereof. The heteroepitaxial growth method comprises the following steps: carrying out vapor phase epitaxial growth on a substrate material to form a gallium oxide nanowire array; and, by controlling the growth conditions, enabling the gallium oxide nanowires in the gallium oxide nanowire array to transversely merge and grow, thereby forming the gallium oxide thin film on the gallium oxide nanowire array through epitaxial growth. According to the invention, the gallium oxide nanowire arrays are combined to grow the beta Ga2O3 film, so that the [beta]-Ga2O3 film is prevented from directly growing on the substrate, the mismatch degree between heteroepitaxial materials and the difficulty of a heteroepitaxial process are greatly reduced, and the crystal quality of the [beta]-Ga2O3 film is improved; and by controlling the diameter and the period of the gallium oxide nanowire, the grain nucleation size can be well increased, the influence of the small nucleation size on the crystal quality is avoided, the growth of the [beta]-Ga2O3 film can be realized at the temperature of 300 DEG C-1000 DEGC, and the energy consumption can be effectively reduced.

The invention discloses a knowledge assistance-based SR-STAP method and a storage medium. The method comprises the steps of obtaining sample data of a to-be-detected distance unit through an airborne radar; uniformly dispersing the space frequency of the clutter into a grid point set; obtaining a discrete Doppler frequency grid point set of the clutter; adjusting the Doppler frequency based on a preset condition to obtain a new Doppler frequency group; adjusting the spatial frequency to obtain a new discretized spatial frequency group; constructing a space-time steering vector dictionary according to the new Doppler frequency group and the space-time steering vector corresponding to the new discretized spatial frequency group; performing sparse decomposition on sample data by using the space-time steering vector dictionary to obtain a sparse recovery vector; and carrying out clutter covariance matrix estimation by using the sparse recovery vector. According to the method, the spatial frequency and the Doppler frequency are jointly adjusted, the over-complete space-time steering vector dictionary is constructed, the problem of grid mismatch is effectively solved, and the performance of the STAP method is improved.

The invention provides a semiconductor homogenous substrate, a preparation method thereof, and a preparation method of a homogeneous epitaxial layer. The preparation method of the semiconductor homogenous substrate at least comprises the following steps that a female substrate is provided, and a period structure composed of period structural units at least is formed in the surface of the female substrate; an epitaxial barrier layer for realizing selective epitaxial growth is formed in the surfaces of the female substrate and the period structure; and epitaxial barrier layers are removed from the tops of the period structural units selectively to form protruded seed crystals correspondingly, a seed crystal array composed of the protruded seed crystals at least is formed, and the semiconductor homogenous substrate is obtained finally. The semiconductor homogenous substrate which can be used repeatedly is used to realize isoepitaxial growth, and the homogenous epitaxial layer which can bepeeled and transferred and is controllable in thickness can be obtained directly. Traditional monocrystalline ingot pulling and slicing processes can be avoided, and a homogenous epitaxial wafer canbe prepared in low cost and high material utilization efficiency.

The invention discloses a pressure sensitive element resistant to high-temperature particle scouring, a preparation method of the pressure sensitive element and a thin film sputtering pressure sensor.The pressure sensitive element comprises an elastic substrate material, is of a flared convex elastomer structure and comprises a pressurizing cavity, a body and a mounting part; and a transition layer, an insulating layer, a resistive film layer, a passivation layer and a metal layer are sequentially arranged on the mounting part. The preparation method of the pressure sensitive element comprises the step of sequentially preparing the transition layer, the insulating layer, the resistive film layer, the passivation layer and the metal layer on the elastic substrate material. The pressure sensitive element provided by the invention has the advantages of good high temperature resistance, strong erosion/impact resistance, long service life, wide application range, good reliability, high strain sensitivity and the like. The preparation method of the pressure sensitive element has the advantages of simple preparation process, convenience in operation, low production cost, short productionperiod and the like, and the pressure sensitive element can be widely used for preparing sputtering film pressure sensors and has high use value and good application prospect.

The invention discloses a Si-based double-sided double-junction AlGaAs solar cell and a preparation method thereof. The Si-based double-sided double-junction AlGaAs solar cell comprises an N-type Si substrate and an N-type AlGaAs functional layer; the upper surface and the lower surface of the N-type Si substrate are doped to form a P +-Si layer and an N +-Si layer respectively; the upper surface and the lower surface of the N-type AlGaAs functional layer are doped to form an N +-AlGaAs layer and a P +-AlGaAs layer respectively, an AlGaAs tunnel junction is formed on the N +-AlGaAs layer, and the AlGaAs tunnel junction is bonded on the P +-Si layer; and an antireflection film, an ohmic contact layer and a front electrode are formed on the P < + >-AlGaAs layer, and an antireflection film, an ohmic contact layer and a back electrode are formed on the N < + >-Si layer. According to the invention, the double-sided Si-based solar cell is prepared through wafer bonding and impurity diffusion, so that the preparation cost of the solar cell can be reduced; and in addition, by adopting a wafer bonding mode, the problem of large lattice mismatch between AlGaAs and Si can be effectively solved, and the material performance of the device layer is improved.

The invention provides a multi-resolution collaborative pedestrian identification method and related equipment, and aims to solve the problem of pedestrian image resolution mismatch caused by distance change between a pedestrian and a camera in an actual monitoring scene. The multi-resolution collaborative pedestrian identification method specifically comprises the following steps: aiming at the problem of different scale space image identification values; proposing a multi-resolution image collaborative identification model, and jointly generating discrimination features by using the images before and after reconstruction; and a multi-feature weighted fusion mode is adopted, an optimal weight combination is obtained through calculation, and accurate expression of image features of any resolution is realized. Through the feature fusion calculation of the multi-resolution images, the identification values of the images with different resolutions are fully exerted, and the pedestrian identification capability in the resolution mismatch environment is improved.

The invention provides a capacitor structure and a capacitor array. The capacitor structure comprises an upper pole plate and a lower pole plate, wherein the upper pole plate comprises a main upper pole plate and a secondary upper pole plate; the main upper pole plate is connected with a common end; the secondary upper pole plate is grounded; the main upper pole plate and the lower pole plate form a main capacitor; and the secondary upper pole plate and the lower pole plate form a secondary capacitor. The main upper pole plate and the secondary upper pole plate are arranged in the capacitor structure, the corresponding main capacitor participates charge redistribution, the secondary capacitor does not participate charge redistribution, and the capacitance value of the main capacitor can be changed by amending the area of the main upper pole plate, so that the capacitor structure has different fractional ratio capacitance values; and moreover, the sum of the area of the main upper pole plate and the area of the secondary upper pole plate in each capacitor structure is equal when the capacitor structure is used, so that the problem of capacitor mismatching existing when a plurality of capacitor structures with different capacitance values are used can be solved.