Preparation method for multi-shell CdZnS/CdSe/ZnS core/shell-structured quantum dot

A quantum dot and shell structure technology, applied in chemical instruments and methods, nanotechnology for materials and surface science, nanotechnology, etc., can solve problems such as being susceptible to water, oxygen erosion and photodegradation, and not being passivated at the same time.

Inactive Publication Date: 2018-01-12
NANCHANG HANGKONG UNIVERSITY
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AI Technical Summary

Problems solved by technology

Generally, organic ligands cannot passivate the electron and hole trap states on the surface of quantum dots at the same time, and are susceptible to water, oxygen erosion and photodegradation, and cannot maintain long-term effective luminescence and stability of quantum dots.

Method used

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Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0020] 1. Preparation method of CdZnS / CdSe / ZnS quantum dots:

[0021] (1) Synthesis of CdZnS core material. Using cadmium oxide CdO and anhydrous zinc acetate Zn(Ac) 2 As a raw material, anhydrous zinc acetate Zn(Ac) 2 excess. 0.5mmol CdO and 5mmol Zn(Ac) 2 Add to a 50ml three-necked flask, then add 6ml oleic acid OA and 10mL octadecene, when the temperature reaches 100°C, blow in an inert gas for 15 minutes to remove the air, then heat up to 315°C under an inert gas environment, when the temperature reaches 305°C Inject 1mmol of S source (high-purity sulfur dissolved in octadecene) at ℃. After the reagent is injected, take a sample at intervals to measure the absorption spectrum. When the absorption spectrum of two consecutive samples does not change, the heat preservation is over and cooled. At 60°C, the CdZnS core material is formed, and the stock solution appears purple under ultraviolet light.

[0022] (2) Purification of CdZnS nuclear quantum dots. First, add an ap...

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Abstract

The invention relates to a preparation method for a multi-shell CdZnS/CdSe/ZnS core/shell-structured quantum dot. A high-temperature hot injection method, an alternating successive ionic layer adsorption growth method and a double-precursor method are adopted to synthesize the CdZnS/CdSe/ZnS quantum dot, wherein the quantum dot can be synthesized by another four types of feasible solutions. By continuously wrapping CdSe and ZnS shell layers with different thicknesses and different layer numbers, the preparation method can obtain a continuously tunable wide spectral range, and the multi-shell CdZnS/CdSe/ZnS core/shell-structured quantum dot has the characteristics of good monochromaticity, good monodispersity, narrow and symmetrical fluorescence emission peaks and the like, can also increase the stability of light emission, and has more and better optical properties than an individual CdZnS quantum dot and an individual CdSe quantum dot or a CdZnS/CdSe quantum dot. Moreover, by changingthe thickness of the CdSe shell layers and continuously wrapping the ZnS shell layers, the distribution state of electron holes of the quantum dot can be changed, consequently, a variety of materialswith different properties can be prepared, and the quantum dot can be further applied in various aspects.

Description

technical field [0001] The invention relates to the preparation and application of nanocrystalline materials, and aims at a preparation method of multi-shell CdZnS / CdSe / ZnS core / shell structure quantum dots. Background technique [0002] Nanostructured materials, referred to as nanomaterials, refer to a powdery or agglomerated natural or artificial material composed of basic particles. One or more three-dimensional dimensions of this basic particle are between 1 nanometer and 100 nanometers, and this - The total number of basic particles accounts for more than 50% of the total number of all particles in the entire material. When the particle size reaches the nanometer level, the electronic energy level near the Fermi level splits into discrete energy levels from a continuous state. When the energy level spacing is greater than the thermal energy, magnetic energy, electrostatic energy, magnetostatic energy, photon energy or the condensation energy of the superconducting stat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88B82Y20/00B82Y40/00B82Y30/00
Inventor 李清华白锦科董成通金肖
Owner NANCHANG HANGKONG UNIVERSITY
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