Preparation method of quantum dot light-emitting diode

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the adverse effects of film layers, quantum dot aggregation, precipitation and other problems, and reduce non-radiative transition and operation time Short, the effect of improving luminous efficiency

Active Publication Date: 2020-06-02
TCL CORPORATION
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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a method for preparing a quantum dot light-emitting diode, which aims to solve the problem that the quantum dots behind the existing ligands are prone to aggregation, precipitation, or other film layers are damaged during ligand exchange. issues that adversely affect

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  • Preparation method of quantum dot light-emitting diode
  • Preparation method of quantum dot light-emitting diode

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Embodiment Construction

[0021] The present invention provides a method for preparing a quantum dot light-emitting diode. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0022] In this embodiment, the structure of the quantum dot light-emitting diode is divided into two types: a positive device and an inverse device, and each structure of the quantum dot light-emitting diode can have various forms.

[0023] For quantum dot light-emitting diodes with positive structure, this embodiment will mainly use the following figure 1 The quantum dot light-emitting diode shown as an example is introduced. The hole functional layer in this embodiment is a hole injection layer and a hole transport layer located on the hole injection layer, a...

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Abstract

The invention discloses a preparation method of a quantum dot light-emitting diode, the quantum dot light-emitting diode is a positive device, and the method comprises the following steps: providing an anode; forming a hole function layer on the surface of the anode; forming a layer of short-chain ligand compound on the surface of the hole functional layer; and forming a quantum dot light-emittinglayer on the surface of the short-chain ligand compound. According to the invention, stable quantum dots can be obtained, the recombination of electron / hole pairs in excitons can be greatly improved,and the device efficiency is improved. Meanwhile, the ligand exchange method disclosed by the invention has the advantages of simple steps, short operation time, capability of effectively avoiding influence on other film layers and the like.

Description

technical field [0001] The invention relates to the field of quantum dot light emitting devices, in particular to a preparation method of quantum dot light emitting diodes. Background technique [0002] Quantum dots are semiconductor nanocrystals composed of a certain number of atoms, usually in the size of 1–10 nm, generally spherical, and their elemental composition is generally II-VI or III-V elements. The size of quantum dots is smaller than or close to the exciton Bohr radius of its corresponding bulk material, and has obvious quantum dot confinement effect, thus showing excellent optical properties. [0003] Quantum dot light-emitting diode is a new type of display technology developed on the basis of the device structure of organic light-emitting diodes. The similarity between the two lies in their similar luminescence principles, that is, under the excitation of current, electron / hole pairs are injected into the light-emitting layer through the electron / hole transpo...

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Application Information

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IPC IPC(8): H01L51/56H01L51/50
CPCH10K50/115H10K71/441H10K50/00H10K71/164
Inventor 聂志文杨一行
Owner TCL CORPORATION
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