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Integrated DFB semiconductor laser and preparation method thereof

A technology of lasers and ridge waveguides, which is applied in the field of integrated DFB semiconductor lasers and its preparation, can solve the problems of large changes in laser output power and lower yield of DFB lasers, etc., to improve electrical isolation and adjust lateral optical fields, and improve chip yield. efficiency and cost reduction

Active Publication Date: 2019-07-23
FUJIAN Z K LITECORE LTD
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Problems solved by technology

Usually TO packaged laser devices use a built-in backlight detector to monitor the working conditions of the laser to achieve the characteristics of feedback laser life performance; in addition, because the DFB laser prepared by the holographic method has the problem of random grating phase on the backlight end face, the back light output power of the laser Changes are large, and this part of the change causes a decrease in the yield of DFB lasers

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  • Integrated DFB semiconductor laser and preparation method thereof
  • Integrated DFB semiconductor laser and preparation method thereof
  • Integrated DFB semiconductor laser and preparation method thereof

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Embodiment Construction

[0016] The technical solution of the present invention will be specifically described below in conjunction with the accompanying drawings.

[0017] The invention provides an integrated DFB semiconductor laser. A branch arc-shaped branch waveguide is drawn from half the cavity length of the laser along the cavity length direction toward the light-emitting end face of the laser, and the arc-shaped branch waveguide and the straight ridge are formed at the light-emitting end face of the laser. The waveguide has a pitch (10-20 microns), and an ion implantation area is formed between the arc-shaped branch waveguide and the straight ridge waveguide. The ion implantation region has a length of 30 micrometers along the cavity length direction from the light emitting end face of the laser.

[0018] The present invention also provides a preparation method based on the above-mentioned laser, (1) grow the substrate structure by MOCVD epitaxy on the substrate, prepare a uniform grating, bur...

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Abstract

The invention relates to an integrated DFB semiconductor laser and a preparation method thereof. A branch arc-shaped branch waveguide is led out from a half cavity length position of the laser towardsthe light-emitting end face of the laser in the cavity length direction, a distance is reserved between the branch arc-shaped branch waveguide and a straight ridge waveguide at the light-emitting endface of the laser, and an ion implantation area is formed between the branch arc-shaped branch waveguide and the straight ridge waveguide. According to the invention, the function of integrating light-emitting and detection can be achieved, so that the device cost is reduced, and the effect of improving the coupling light-emitting power can be achieved by improving the divergence angle.

Description

technical field [0001] The invention relates to an integrated DFB semiconductor laser and a preparation method thereof. Background technique [0002] DFB semiconductor laser is very suitable for high-speed direct modulation and long-distance transmission due to its good monochromaticity and wide linewidth. It is the mainstream laser device in the future development of optical fiber communication. Usually TO packaged laser devices use a built-in backlight detector to monitor the working conditions of the laser to achieve the characteristics of feedback laser life performance; in addition, because the DFB laser prepared by the holographic method has the problem of random grating phase on the backlight end face, the back light output power of the laser The change is large, and this part of the change causes the decrease of the yield of the DFB laser. Contents of the invention [0003] The purpose of the present invention is to provide an integrated DFB semiconductor laser an...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/12H01S5/22H01S5/10
CPCH01S5/12H01S5/22H01S5/1007Y02P70/50
Inventor 薛正群吴林福生杨重英陆绿苏辉
Owner FUJIAN Z K LITECORE LTD