Power device packaging structure and method thereof

Abstract

The invention provides a power device packaging structure and a preparation method thereof. The power device packaging structure comprises a plurality of power device packaging structure units, the power device packaging structure unit comprises a first heat dissipation substrate, a power device, a diode and a high-heat-conductivity plastic packaging material shell, wherein the power device and the diode are arranged on the surface of the first heat dissipation substrate, and the upper part of the power device packaging structure unit is subjected to plastic packaging by using a high-heat-conductivity plastic packaging material, a high-heat-conductivity plastic packaging material shell. The first heat dissipation substrate is in a long plate shape, and the power device and the diode are sintered on the surface of the first heat dissipation substrate through a sintering technology. The power device packaging structure based on the sintering technology can realize series-parallel connection in a two-dimensional plane, has good heat conductivity and reliability, and is simple in grid control; and in the manufacturing of a single subunit, the chip surface is not required to be directlycontacted, so that the risk of chip damage caused by uneven pressure is avoided.

Description

technical field [0001] The invention belongs to the field of semiconductor packaging devices, in particular to the field of design and manufacture of IGBT parallel power modules. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) has the advantages of high input impedance and low conduction voltage drop of GTR (Power Transistor). The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. I...

AI Technical Summary

Problems solved by technology

[0010] (1) From the level of the overall subunit series connection, it is the same as the traditional crimping IGBT module. After stacking and series connection, it can only dissipate heat from the outside, and cannot dissipate heat from both sides of each power module unit. The total heat dissipation area is small, and the heat dissipation Poor management;

[0011] (2) The wire bonding process is still used in the internal chip connection, so the first and second solder joints still fall off, the solder layer is fatigued, and the excessive ultrasonic energy / vertical pressure during the bonding process causes damage to the inside of the chip, etc. risk;

[0012] (3) When a single power module unit is used alone, because multiple IGBTs cannot be connected in series internally, the loadable voltage is small

The current commercially available crimping IGBTs are mainly circular shell packages and crimping of multiple chips in parallel. This crimping method is convenient for large-capacity power transmission, but the withstand voltage value of a single device still maintains the original chip withstand voltage. value

However, in high-voltage power transmission, multiple devices need to be connected in parallel. Too many parallel connections of such devices will increase the parasitic parameters. Device damage

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