Microarray integrated LED chip and preparation method thereof
An LED chip and microarray technology, applied in electrical components, electric solid state devices, circuits, etc., can solve the problems of high packaging technology requirements, high cost, complicated processes, etc., and achieve high luminous intensity, small size, and high brightness. Effect
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[0037] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings, but the present invention can be implemented in various ways defined and covered by the claims.
[0038] see Figure 1 to Figure 7 , a method for preparing a microarray integrated LED chip structure, comprising the following steps:
[0039] Step 1) Select an epitaxial wafer containing a GaN-based LED epitaxial structure, and its epitaxial wafer structure includes a substrate, a buffer layer, an N-type semiconductor layer (N-type GaN layer), a multi-quantum well layer (MQW) and a P type semiconductor layer (P-type GaN layer).
[0040]Step 2) First use the yellow light lithography process and the inductively coupled plasma (ICP) etching process to etch the N-type GaN layer from the P-type GaN layer around the epitaxial wafer in an array manner, exposing the N-type GaN layer mesa, The depth of etching from the P-type GaN layer to the N-type GaN layer by...
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