Silicon-based quartz MEMS resonant torque sensor for micro-nano-scale material

Abstract

The invention relates to a silicon-based quartz MEMS resonant torque sensor for a micro-nano-scale material. The sensor comprises a monocrystalline silicon substrate layer; a silicon dioxide insulating layer is grown on the monocrystalline silicon substrate layer; the silicon dioxide insulating layer is provided with a monocrystalline silicon structural layer; the monocrystalline silicon structural layer comprises a key slot of a linear micro-nano material clamping mechanism; two sides of the key slot are connected with an output beam and the top end of a V-shaped actuating beam; the V-shapedactuating beam is fixed on an anchoring point; the output beam is fixed on the anchoring point through a limiting beam; the two ends of the output beam are connected with the input end of a second-order amplification beam; the second-order amplification beam is fixed on the anchoring point through a fulcrum beam; the output end of the second-order amplification beam is connected with a suspensionplatform; the suspension platform is connected with one end of a quartz double-end fixed tuning fork; the other end of the quartz double-end fixed tuning fork is fixed on the anchoring point; all structures except the anchoring point are in suspended states; a control voltage is applied to the V-shaped actuating beam; and the V-shaped actuating beam moves due to thermal stress, so as to clamp a spline at one end of a linear micro-nano material. The method has the advantages of high precision, low cost and the like.

Description

technical field [0001] The invention relates to the technical field of micro-electromechanical systems (MEMS) sensors, in particular to a silicon-based quartz MEMS resonant torque sensor for micro-nano-scale materials. Background technique [0002] In recent years, with the development of micro-nano technology, the performance of materials at the micro-nano scale has gradually become a hot topic of scientific research. Due to the influence of scale effects, the mechanical properties of materials at the micro-scale, such as stretching, bending, torsion, etc. There are great differences in the macroscopic classical mechanical properties. In some fields of micro-nano manipulation, the mechanical properties of materials under in-situ torsion urgently need further research to reveal the essential mechanism of their deformation. [0003] Among the currently published literature, there are few literatures that can accurately test and observe the in-situ torsion of micro-nano-scale...

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Problems solved by technology

[0003] Among the currently published literature, there are few literatures that can accurately test and observe the in-situ torsion of micro-nano-scale materials. Chinese patent CN 105606459B (named in-situ torque testing device and observation device for micro-nano-scale materials) And CN 102788727B (named multipurpose in-situ micro-scale mechanical property testing method under scanning electron microscope), discloses a device for clamping, in-situ twisting and observing under scanning electron microscope for micro-nano materials, but does not involve the quantification of torsional force Measurement; Chinese patents CN 103293066B (named in-situ torsion test platform for micro-mechanical properties of precision materials), CN105021338B (named a torque measurement device and method for a miniature tensile torsion fatigue testing machine), which mentioned micro-nano materials Quantitative testing of torsional force, but mainly still in the research at the test bench level, without mentioning the specific torque sensor design; in Chinese patent CN 106525304B (named as a MEMS resonant torque sensor for measuring the torsional performance of linear micro-nano materials) Among them, it designed a MEMS resonant torque sensor, but its resonator uses a silicon tuning fork structure, which cannot work in an atmospheric environment, and it itself has no piezoelectric characteristics, requiring complex excitation and detection methods, which is easy to introduce noise interference. Limits further improvements in accuracy and integration with other microdevices

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