35results about How to "Mass-produced" patented technology

The invention provides a silicon-based gas sensitive chip of integrated humiture sensor and a manufacturing method of the silicon-based gas sensitive chip, relating to environment monitoring technology and aiming to solve the problem that a silicon-based chip doesn't have an integrated gas-sensitive unit. A plurality of gas-sensitive units, a temperature sensitive unit, and a humidity sensitive unit are integrated on one N-type monocrystalline silicon wafer, a secondary heat insulation through hole having a rectangular cross section is arranged between every two adjacent units, and in each gas-sensitive unit, a primary heat insulation through hole having a trapezoidal cross section is arranged between every two adjacent electrode lead wires. The four corners of each of the rectangular cross section and the trapezoidal cross section are arranged in an arc transition manner. The chip can monitor the humiture indexes of environment and can monitor various gases, and the two-stage heat insulation can meet the different work temperature requirement of different units. The heat insulation holes are subjected to arc transition instead of sharp angle, so that the array chip has the advantages of multifunctional measurement, good selectivity, high mechanical strength, high reliability, and low power consumption, and is suitable for environment monitoring.

Disclosed are an environmentally friendly brass alloy for casting and a manufacturing method therefor. The brass alloy is free of the elements selenium, tellurium, antimony, phosphorus, magnesium and manganese, and the components thereof are: 58-61.5 wt.% of Cu, ≤ 0.25 wt.% of Pb, 0.5-0.8 wt.% of Al, < 0.1 wt.% of Sn, < 0.1 wt.% of Ni, 0.02-0.15 wt.% of Fe, and 5-12 ppm of B, with the balance being Zn and inevitable impurities. In addition to excellent polishing performance and hot tearing resistance performance, the brass alloy has good comprehensive performance, and is suitable for casting formed bathroom plumbing parts.

The invention discloses an ink-printing preparation method of light-assisted thermoelectric devices: mixing binder, diluent, N-type or P-type thermoelectric material powder to obtain N-type thermoelectric ink and P-type thermoelectric ink; Or P-type thermoelectric ink is printed on the substrate, and after drying, P-type or N-type thermoelectric ink is printed on the substrate; after the substrate printed with thermoelectric ink is cured, the N-type thermoelectric ink and P-type thermoelectric ink The inks are connected in series to form a thermoelectric generation unit; two or more light-absorbing materials with different absorption rates are covered on the thermoelectric generation unit to obtain the final light-assisted thermoelectric device. The prepared light-assisted thermoelectric device comprises a substrate, a thermoelectric generation unit covered on the substrate, and a light-to-heat conversion unit covered on the thermoelectric generation unit. The invention provides a light-assisted thermoelectric device based on ink printing, which can collect light energy and heat energy at the same time, and has the characteristics of mass production and low cost.