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Ink printing preparation method and structure of photo-assisted thermoelectric device

A thermoelectric device and light-assisted technology, which is applied in the manufacture/processing of thermoelectric devices, thermoelectric device parts, ink, etc., can solve the problems of high cost and complicated preparation process, achieve stable performance, excellent electrical characteristics, and reduce device cost Effect

Active Publication Date: 2019-09-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is: the traditional photoelectric conversion device or thermoelectric conversion device has complicated preparation process and high cost. The present invention provides an ink-printed preparation method and structure of a light-assisted thermoelectric device that solves the above problems

Method used

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  • Ink printing preparation method and structure of photo-assisted thermoelectric device
  • Ink printing preparation method and structure of photo-assisted thermoelectric device
  • Ink printing preparation method and structure of photo-assisted thermoelectric device

Examples

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Embodiment 1

[0038] This embodiment provides an ink-printed preparation method for light-assisted thermoelectric devices, and the specific steps are as follows:

[0039] In step 1, polyimide is selected as the substrate of the light-assisted thermoelectric device, and the length of the substrate is 50 mm, the width is 40 mm, and the thickness is 150 μm.

[0040] Step 2, using Bi 2 Te 2.7 Se 0.3 As an N-type thermoelectric material, Sb 2 Te 3 As the P-type thermoelectric material, the powder particle size of the N-type thermoelectric material and the P-type thermoelectric material are both smaller than 37 μm.

[0041] Step 3, the epoxy resin selects bisphenol F epoxy resin and polypropylene glycol diglycidyl ether, and the two epoxy resins are mixed in a mass ratio of 1:1, wherein the epoxy value of bisphenol F epoxy resin is 0.58eq / 100g, the epoxy value of polypropylene glycol diglycidyl ether is 0.32eq / 100g; curing agent selects methyl hexahydrophthalic anhydride; catalyst selects 1...

Embodiment 2

[0048] This embodiment provides an ink-printed preparation method for light-assisted thermoelectric devices, and the specific steps are as follows:

[0049] In step 1, polyimide is selected as the substrate of the light-assisted thermoelectric device, and the length of the substrate is 50 mm, the width is 40 mm, and the thickness is 150 μm.

[0050] Step 2, using Bi 2 Te 2.7 Se 0.3 As an N-type thermoelectric material, Bi 0.6 Sb 1.4 Te 3 As the P-type thermoelectric material, the powder particle size of the N-type thermoelectric material and the P-type thermoelectric material are both smaller than 37 μm.

[0051] Step 3, the epoxy resin selects bisphenol F epoxy resin and polypropylene glycol diglycidyl ether, and the two kinds of epoxy resins are mixed in a mass ratio of 1:1, wherein the epoxy value of bisphenol F epoxy resin is 0.58 eq / 100g, the epoxy value of polypropylene glycol diglycidyl ether is 0.32eq / 100g; the curing agent selects methyl hexahydrophthalic anhydr...

Embodiment 3

[0058] This embodiment provides an ink-printed preparation method for light-assisted thermoelectric devices, and the specific steps are as follows:

[0059] In step 1, polyimide is selected as the substrate of the light-assisted thermoelectric device, and the length of the substrate is 50 mm, the width is 40 mm, and the thickness is 150 μm.

[0060] Step 2, using Bi 2 Te 2.7 Se 0.3 As an N-type thermoelectric material, Sb 2 Te 3 As the P-type thermoelectric material, the powder particle size of the N-type thermoelectric material and the P-type thermoelectric material are both smaller than 37 μm.

[0061] Step 3, the epoxy resin selects bisphenol F epoxy resin and polypropylene glycol diglycidyl ether, and the two kinds of epoxy resins are mixed in a mass ratio of 1:1, wherein the epoxy value of bisphenol F epoxy resin is 0.58 eq / 100g, the epoxy value of polypropylene glycol diglycidyl ether is 0.32eq / 100g; the curing agent selects methyl hexahydrophthalic anhydride; the c...

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Abstract

The invention discloses an ink printing preparation method of a photo-assisted thermoelectric device. The method comprises the steps of mixing an adhesive, a diluent, an N-type or P-type thermoelectric material powder to obtain N-type thermoelectric ink and P-type thermoelectric ink; printing the N-type or P-type thermoelectric ink on a substrate, drying the N-type or P-type thermoelectric ink, and then printing P-type or N-type thermoelectric ink on the substrate; after the substrate with the printed thermoelectric ink is solidified, connecting the N-type thermoelectric ink and the P-type thermoelectric ink in series by a conductive material in order to form a thermoelectric generation unit; and covering the thermoelectric generation unit with two or more light-absorbing materials having different absorptivity to obtain the final photo-assisted thermoelectric device. The prepared photo-assisted thermoelectric device comprises a substrate, a thermoelectric generation unit covering the substrate, and a photo-thermal conversion unit covering the thermoelectric generation unit. The invention provides a photo-assisted thermoelectric device based on ink printing, which can simultaneously collect light energy and heat energy, can be subjected to mass production and has low cost.

Description

technical field [0001] The invention relates to the field of new energy technology, in particular to an ink-printing method for preparing a light-assisted thermoelectric device and its structure. Background technique [0002] Today, the growth of the world's population and the advancement of society, economy and technology cannot be separated from the increasing use of natural gas, coal, petroleum and chemical batteries. The limited reserves of traditional fossil fuels and their global environmental impact have prompted researchers to actively search for renewable and sustainable clean energy sources. The development of effective renewable and clean energy is conducive to solving the energy crisis and the greenhouse effect and promoting the sustainable development of human society. Among various renewable clean energy technologies, photovoltaics and thermoelectrics have received increasing attention in recent years. [0003] As the most important source of energy for the e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/02H01L35/34C09D11/03C09D11/102H10N10/80H10N10/01
CPCC09D11/102C09D11/03H10N10/80H10N10/01
Inventor 张晓升刘欣文丹良巴雁远阮启恒鲍景富
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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