Unlock instant, AI-driven research and patent intelligence for your innovation.

Micro emulsion removers for advanced photolithography

A technology of remover and microemulsion, applied in the field of SiARC film, can solve the problems of inability to remove SiARC layer, damage to other sensitive features, etc.

Inactive Publication Date: 2019-08-06
DOW GLOBAL TECH LLC +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These chemistries can remove low silicon content SiARC films at high temperatures, but cause significant damage to other sensitive features and cannot remove higher silicon content SiARC layers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro emulsion removers for advanced photolithography
  • Micro emulsion removers for advanced photolithography
  • Micro emulsion removers for advanced photolithography

Examples

Experimental program
Comparison scheme
Effect test

example

[0032] I. Raw materials

[0033]

[0034] II. Example preparation

[0035] 1. Surfactant Complex Preparation

[0036] The surfactant used was linear alkylbenzenesulfonic acid neutralized with monoethanolamine. The surfactant was prepared by mixing monoethanolamine (12.9 g) with deionized water (320.53 g) in a glass jar with stirring. Linear alkylbenzenesulfonic acid (67.3 g) was added slowly with stirring. The surfactant complex was stirred for 30 minutes after the addition was complete.

[0037] 2. Remover Solution Preparation

[0038] Remover solutions were manually prepared by weighing each component into plastic cups. For solutions containing hydrogen peroxide, first prepare a formulation without hydrogen peroxide. Immediately prior to testing, the remover solution was preheated to the test temperature (typically 60°C) in a 65°C oven. Hydrogen peroxide solution was added by volume to the preheated remover solution and returned to the oven for 3 min and used immed...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a micro emulsion remover comprising, based on the total weight of the micro emulsion remover, 1) from 10% to 60%, at least one organic solvent, ii) from 10% to 50%, at least one co-solvent, iii) from 0.1% to 10%, at least one base, iv) from 0.1% to 10%, at least one oxidizer, v) from 0.1% to 10%, at least one surfactant, and vi) water.

Description

technical field [0001] The present invention relates to a microemulsion remover which allows the removal of polymer films used in advanced photolithography schemes, such as triple-layer stacks, especially SiARC films before and after etching. Background technique [0002] Advanced photolithography requires the use of complex patterning schemes, such as a three-layer resist system consisting of a photoresist layer, a high silicon content antireflective coating (SiARC) and a high carbon content bottom layer. Although this three-layer stack enables patterning of features at the 10nm node, wet removal of these films, especially SiARC films, after photolithographic processing poses significant challenges due to the high levels of cross-linking and silicon content in the films. Removal of these films often requires exposure to high levels of aggressive bases and oxidizing agents such as ammonium hydroxide and hydrogen peroxide. These chemistries can remove low silicon content SiA...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
CPCG03F7/425C11D17/0021C11D3/43C11D3/2093C11D3/18C11D3/2003C11D3/2072C11D3/2068C11D1/22C11D1/143C11D1/146C11D1/29C11D1/123C11D1/04C11D3/044C11D3/30C11D3/3947G03F7/0752G03F7/426G03F7/423H01L21/31133C11D2111/22G03F7/30H01L21/027G03F7/70933G03F7/004C11D1/002C11D3/3942H01L21/02041
Inventor A·K·施密特C·E·莫勒K·M·奥康奈尔C·J·图克吕志坚S·山田
Owner DOW GLOBAL TECH LLC