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Molten metal assistive heat transferring type laser lift-off device and method

A liquid metal and laser stripping technology, which is applied in metal processing, laser welding equipment, metal processing equipment, etc., can solve the problems of inconsistent warpage in batches, low stripping yield, instability, etc., to achieve wide application and optimize laser The effect of peeling technology and wide application prospects

Inactive Publication Date: 2019-08-09
SINO NITRIDE SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, even if the temperature reaches the preset temperature, since the GaN / sapphire composite substrate still has a certain warpage and the line contact between the composite substrate and the wafer carrier, the temperature of the composite substrate is not evenly distributed during peeling.
At the same time, slight differences in the process of epitaxial growth between batches will lead to inconsistent warpage between batches
What's more serious is that the warpage is often irregular, such as a saddle shape, which makes it difficult for conventional normally concave or normally convex or flat-bottomed wafer carriers to meet the requirements of laser lift-off for all composite substrates, and the laser lift-off process The window is narrow and unstable, and the stripping yield is low

Method used

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  • Molten metal assistive heat transferring type laser lift-off device and method
  • Molten metal assistive heat transferring type laser lift-off device and method
  • Molten metal assistive heat transferring type laser lift-off device and method

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Embodiment 1

[0042] Such as figure 1 As shown, this embodiment provides a laser lift-off device with liquid metal 104 assisted heat conduction, the laser lift-off device includes: a heater 10, a wafer carrier 103 and a sealed cavity 105, and the wafer carrier 103 is used to carry Liquid Metal 104.

[0043] The heater 10 is used to provide the temperature required for peeling the substrate 20 to be peeled off. The heater 10 includes a heating furnace wall 101, a heating unit 102, a heating window 109 and a cooling fan 110. The position corresponding to the top of the heater 10 and the wafer carrier 103 is a heating window 109, and the heating window The material of 109 includes glass or quartz, and the heating furnace wall 101 of the heater 10 is a hollow structure, and cooling water is passed inside it for reducing the temperature of the heater 10 . Described heating unit 102 is positioned at the inside of described heating furnace wall 101, and it can be a kind of in resistance wire hea...

Embodiment 2

[0050] Such as figure 2 As shown, this embodiment provides a laser lift-off method in which liquid metal 104 assists heat conduction, and the laser lift-off method includes steps:

[0051] Such as figure 2 As shown, step 1) S11 is firstly performed to provide a laser lift-off device with liquid metal 104 assisted heat conduction.

[0052] Such as figure 2 As shown, then step 2) S12 is performed to form liquid metal 104 in the wafer carrier 103 .

[0053] For example, the temperature range for forming the liquid metal 104 in the wafer carrier 103 may be between normal temperature and 850° C., and the boiling point of the liquid metal is greater than 850° C.

[0054] Such as figure 2 As shown, step 3) S13 is then performed to place the substrate 20 to be peeled off on the liquid metal 104 .

[0055] In this embodiment, a suction cup made of quartz can be used to absorb and transfer the substrate 20 to be peeled off, and there are multiple suction cups to prevent the sub...

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Abstract

The invention provides a molten metal assistive heat transferring type laser lift-off device and method. The device comprises a heater, a wafer loading plate and a sealing chamber, wherein the heateris used for supplying temperature for a substrate to be subjected to lift-off processing in the lift-off process; the wafer loading plate is positioned on the heater and is used for loading molten metal; the heater is capable of transferring heat to the molten metal through the wafer loading plate, and the heat is transferred to the substrate to be subjected to lift-off processing through the molten metal so as to process the substrate to be subjected to lift-off processing; the sealing chamber is used for sealing the wafer loading plate; and a laser window is formed in the top part of the sealing chamber and forms a channel through which laser enters the surface of the substrate, to be subjected to lift-off processing, in a chamber unit. According to the device and the method, molten metal can be in close contact with the substrates which are of different warping shapes and different warping degrees and are to be subjected to lift-off processing, so that heat can be uniformly transferred on the substrate to be subjected to lift-off processing, and as a result, the laser lift-off technology window is widely expanded. With the adoption of the device and the method, the laser lift-off technology can be extremely optimized; and the laser lift-off technology can be widely applied.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a liquid metal assisted heat conduction laser stripping device and a laser stripping method. Background technique [0002] At the end of the 20th century, in order to realize the preparation of electronic power devices with excellent performance such as high frequency, high efficiency and high power, the development process of the third-generation wide bandgap semiconductor materials represented by gallium nitride was accelerated. At present, the preparation technology of large-scale GaN self-supporting substrates has become one of the biggest obstacles on the way forward. The preparation process usually involves heteroepitaxial gallium nitride film on a sapphire substrate, and then using laser lift-off technique (Laser Lift-off Technique) to separate the gallium nitride film from the sapphire to obtain a self-supporting gallium nitride substrate. During th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/00B23K26/146B23K26/70H01L21/78
CPCB23K26/00B23K26/146B23K26/702B23K2101/40H01L21/7813
Inventor 卢敬权庄文荣孙明
Owner SINO NITRIDE SEMICON