Integrated silicon oscillator structure and preparation method thereof
An oscillator and integrated technology, applied in the field of sensors, can solve problems such as complex preparation process, difficult production, and complex structure
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[0082] The present invention provides an integratable silicon oscillator structure, which is characterized in that: the integrated silicon oscillator structure has three resonator structures, MEMS chips and CMOS integrated circuits are integrated together through a bonding process, and the CMOS Silicon resonators are directly prepared on integrated circuits, separate MEMS silicon resonators, and integrated circuit chips are also separate;
[0083] The MEMS resonator is integrated with the CMOS integrated circuit through the bonding process; the silicon oscillator structure integrated with the CMOS circuit is divided into three structures:
[0084] First structure: CMOS IC-bondable silicon resonator with wire-bonding pads, consisting of cavity wafer 1, getter 5, microresonator 3, bonding area 2, CMOS IC 6 , consisting of a wire bonding pad 7 and a substrate 8;
[0085] Second structure: CMOS IC bondable silicon resonator with TSV metal connections, consisting of cavity wafer 1...
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