Integrated silicon oscillator structure and preparation method thereof

An oscillator and integrated technology, applied in the field of sensors, can solve problems such as complex preparation process, difficult production, and complex structure

Pending Publication Date: 2019-08-09
HANKING ELECTRONICS LIAONING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Quartz crystal oscillator is a quartz crystal resonator made of quartz material, commonly known as crystal oscillator.

Method used

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  • Integrated silicon oscillator structure and preparation method thereof
  • Integrated silicon oscillator structure and preparation method thereof
  • Integrated silicon oscillator structure and preparation method thereof

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Embodiment 1

[0082] The present invention provides an integratable silicon oscillator structure, which is characterized in that: the integrated silicon oscillator structure has three resonator structures, MEMS chips and CMOS integrated circuits are integrated together through a bonding process, and the CMOS Silicon resonators are directly prepared on integrated circuits, separate MEMS silicon resonators, and integrated circuit chips are also separate;

[0083] The MEMS resonator is integrated with the CMOS integrated circuit through the bonding process; the silicon oscillator structure integrated with the CMOS circuit is divided into three structures:

[0084] First structure: CMOS IC-bondable silicon resonator with wire-bonding pads, consisting of cavity wafer 1, getter 5, microresonator 3, bonding area 2, CMOS IC 6 , consisting of a wire bonding pad 7 and a substrate 8;

[0085] Second structure: CMOS IC bondable silicon resonator with TSV metal connections, consisting of cavity wafer 1...

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Abstract

The invention discloses an integrated silicon oscillator structure. The integrated silicon oscillator structure is characterized in that the structure is provided with structures of three resonators,the MEMS chip and the CMOS integrated circuit are integrated together through a bonding technology, the silicon resonator is directly prepared on the CMOS integrated circuit, and the independent MEMSsilicon resonator and the integrated circuit chip are also independent. A preparation method of an integrated silicon oscillator structure is characterized in that a silicon resonator, an independentMEMS silicon resonator and an integrated circuit chip are directly prepared on a CMOS integrated circuit; bonding process may be one of eutectic bonding, silicon-silicon direct bonding, or glass slurry bonding and the like; a silicon oscillator is directly prepared on the CMOS integrated circuit; and MEMS silicon oscillators are independent. The silicone oscillator has the advantages that the shockproof effect is 25 times that of a traditional quartz crystal oscillator product, and the oscillator is not affected by vibration and is not prone to breakage, and has the advantages of high integration level, programmability, small size, low power consumption and the like.

Description

technical field [0001] The invention relates to the field of sensors, in particular to an integrated silicon oscillator structure and a preparation method thereof. Background technique [0002] At present, the commonly used oscillators on the market are quartz oscillators, also known as quartz crystal oscillators. Quartz crystal oscillator is a quartz crystal resonator made of quartz material, commonly known as crystal oscillator. The structure of conventional products is complicated, the preparation process is complicated, and production is difficult. Contents of the invention [0003] The object of the present invention is to realize reasonable structure and simplify the preparation process, and especially provide an integrable silicon oscillator structure and a preparation method thereof. [0004] The present invention provides an integratable silicon oscillator structure, which is characterized in that: the integrated silicon oscillator structure has three resonator s...

Claims

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Application Information

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IPC IPC(8): H03B5/04H03B5/06
CPCH03B5/04H03B5/06
Inventor 黄向向杨敏道格拉斯·雷·斯巴克斯关健
Owner HANKING ELECTRONICS LIAONING
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