Method and device for filling sputtering film layer in groove

Abstract

The embodiment of the invention provides a method and device for filling a sputtering film layer in a groove. The method includes the steps that the temperature of a base for heating a to-be-filled groove is pre-set, the sputtering film layer is filled into the to-be-filled groove in a layered and sequential mode by adopting the preset sputtering power, a later-filled sputtering film layer coversthe surface of the before-filled sputtering film layer, the adopted preset sputtering power during later filling is different from the adopted preset sputtering power during before filling, and the total of the thickness of the film layer at each layer meets the preset film thickness. When sputtering film layer filling is conducted on the groove with the high ratio of depth to width, filling can be conducted by dividing of multiple power levels under the preset temperature, during filling, a return and deposition alternate manner can be adopted, the groove inner hollow due to groove opening closing can be effectively prevented, the powers advances gradually in due order from bottom to top, the groove bottom nail failure can be effectively avoided, and the integrity of the device structureis ensured.

Description

technical field [0001] The invention relates to the technical field of display technology, in particular to a sputtering film layer filling method and device in a groove. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) devices have gradually replaced traditional power devices due to their high power, high frequency, and low loss, and have been used as key devices in emerging industries such as rail transit and high-voltage power transmission. widely used. Compared with planar gate IGBT, trench gate IGBT can significantly improve the trade-off relationship between on-state voltage drop and turn-off energy, and is more suitable for low-voltage and high-frequency applications. With the rapid development of IGBT trench gate technology, the gate voltage of the device forms an electron accumulation layer in the N drift region, which enhances the electron injection in the PIN (Positive Intrinsic Negative) diode, increases the carrier concentration on the sur...

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Problems solved by technology

[0003] In the prior art, when filling the IGBT trench, a high temperature above 500°C is used to increase the fluidity of Al, but too high a temperature will cause the failure of the TiN barrier layer and cause the interaction between Al and Si. Diffusion, pin-through

Al has passed through the barrier layer and entered the interior of Si, destroying the trench gate structure and making the device invalid; at the same time, part of Si is dissolved in Al, and when the temperature drops, Si in Al will be in a supersaturated state and precipitate out. Increasing the resistance will also degrade the performance of the device

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