A method for cleaning black edge of silicon nitride ceramic copper clad laminate

Abstract

The invention discloses a method for cleaning the black edge of a silicon nitride ceramic copper clad laminate. The method comprises the following steps of 1, putting the cut silicon nitride ceramic copper clad laminate into pure water with the temperature of 10 DEG C-50 DEG C for ultrasonic washing for 1 min-2 min; 2, putting the cleaned silicon nitride ceramic copper clad laminate into a solution containing a certain copper corrosion inhibitor; 3, slowly and uniformly dropping hydrogen peroxide with the concentration of 10%-40% into the solution containing the copper corrosion inhibitor, andthen taking out the silicon nitride ceramic copper clad laminate; 4, washing the silicon nitride ceramic copper clad laminate with the pure water, and then putting the silicon nitride ceramic copperclad laminate into dilute hydrochloric acid solution with the concentration of 5%-10% for removing a slight oxidation layer on the surface, and finally washing the silicon nitride ceramic copper cladlaminate with the pure water again; and 5, putting the silicon nitride ceramic copper clad laminate with the black edge pre-oxidized into a hydrofluoric acid solution, and carrying out ultrasonic soaking for 30 min-40 min, thus thoroughly removing the black edge. According to the method, through the pre-oxidation and re-cleaning methods, a corresponding black film can be washed away without damaging copper on the surface of silicon nitride, thus thoroughly removing the black edge.

Description

technical field [0001] The invention relates to the technical field of copper-clad laminates, in particular to a method for cleaning black edges of silicon nitride ceramic copper-clad laminates. Background technique [0002] Ceramic-based copper clad laminate has high thermal conductivity, high heat resistance, chemical corrosion resistance, high voltage current resistance, high dimensional stability, low signal loss and other properties, and is an ideal carrier for special electrical circuits; [0003] Silicon nitride is regarded as the first choice for automotive electronics grade IGBT heat dissipation substrates due to its good thermal conductivity and high reliability. However, during the laser cutting process of silicon nitride copper clad laminates, black films (mainly Silicon and silicon oxynitride), the film is relatively thin, but its chemical properties are relatively stable, and it is difficult to remove it by ordinary chemical methods. Contents of the invention...

AI Technical Summary

Problems solved by technology

[0003] Silicon nitride is regarded as the first choice for automotive electronics-grade IGBT heat dissipation substrates due to its good thermal conductivity and high reliability. However, during the laser cutting process of silicon nitride copper clad laminates, black films (mainly Silicon and silicon oxynitride), the film layer is relatively thin, but its chemical properties are relatively stable, and it is difficult to remove it by ordinary chemical methods