Neural network unit circuit based on memristor bridge synapses

A neural network and unit circuit technology, applied in the field of neural network unit circuits, can solve the problems of large size, low fault tolerance of hardware neural network, high power consumption, etc., and achieve the effect of small size, good fault tolerance and low power consumption

Active Publication Date: 2019-08-23
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, transistor-based hardware neural networks such as CPUs, GPUs, FPGAs, and ASICs face the problems of large size and high power consumption, and the fault tolerance of hardware neural networks based on existing memristor arrays is very low.

Method used

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  • Neural network unit circuit based on memristor bridge synapses
  • Neural network unit circuit based on memristor bridge synapses
  • Neural network unit circuit based on memristor bridge synapses

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Embodiment Construction

[0023] Objects, advantages and features of the present invention will be illustrated and explained by the following non-limiting description of preferred embodiments. These embodiments are only typical examples of applying the technical solutions of the present invention, and all technical solutions formed by adopting equivalent replacements or equivalent transformations fall within the protection scope of the present invention.

[0024] The present invention discloses a neural network unit circuit based on memristive bridge synapse, such as figure 1 , figure 2 As shown, the neural network unit circuit includes a memristor weight circuit, which is used to weight the voltage signal transmitted by the upper neuron and transmit it downward; a differential amplifier circuit, which is used to convert the voltage signal transmitted by the synapse into Current signal; current mirror circuit, which is used to add and summarize the current signals transmitted by the synapse and trans...

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Abstract

The invention discloses a neural network unit circuit based on a memristor bridge synapse, and the neural network unit circuit comprises a memristor weight circuit which is used for weighting a voltage signal transmitted by an upper-level neuron and transmitting the voltage signal downwards; a differential amplification circuit which is used for converting the voltage signal transmitted by the synapse into a current signal; and a current mirror circuit which is used for adding and summarizing the current signals transmitted by the synapses and transmitting the current signals to the next stageof neurons. The invention aims to solve the problems that a transistor-based hardware neural network is high in power consumption and large in size, and a neural network circuit based on a memristorarray is low in fault tolerance is solved. The memristor bridge composed of five memristors is used for simulating synapses in neurons, the differential amplification circuit is used for simulating axons of the neurons, the current mirror circuit is used for simulating dendrites of the neurons, the three parts play a role in signal weighting, voltage-current conversion, current accumulation and cascade voltage output respectively, and a neural network unit circuit is completely achieved.

Description

technical field [0001] The invention relates to a neural network unit circuit based on memristive bridge synapse, which can be used in the technical field of hardware neural network. Background technique [0002] Memristor is a two-port nonlinear passive electronic device based on the resistance transition effect, which can memorize the amount of charge flowing through it. Oxide semiconductor) is compatible with the composition of hybrid (hybrid) units, etc., and has strong scalability and 3D stacking capabilities. Memristors also have characteristics very similar to synapses. Neural network has a great application prospect. Non-volatile memory has the characteristics of fast erasing and writing speed, low power consumption and multi-valued storage, and can use cross-array structure to realize high-density storage. [0003] Due to the unique properties of memristors such as plasticity, analog behavior, non-volatility, nanoscale size, and low power consumption, memristors h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06N3/063G06N3/04
CPCG06N3/063G06N3/045
Inventor 刘鑫伟王钰琪陈义豪徐威童祎
Owner NANJING UNIV OF POSTS & TELECOMM
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