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A kind of graphene flexible high-conductivity thin film with sandwich structure and its preparation method and application

A sandwich and vinyl flexible technology, applied to the conductive layer on the insulating carrier, equipment for manufacturing conductive/semiconductive layer, lighting and heating equipment, etc., can solve the problem of insufficient hardness of pure metal, high cost, poor conductivity, etc. problem, to achieve the effect of simple and easy process and improved service life

Active Publication Date: 2020-10-09
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation of graphene by oxidation-reduction method is simple and has a large yield, but its electrical conductivity is poor. In addition, high temperature (above 500°C) or addition of toxic reducing agents are always required in the reduction process of graphene oxide (GO). energy and cause harm to the environment, how to reduce graphite oxide in an energy-saving and green way and improve its electrical conductivity has become an urgent problem to be solved.
On the other hand, because metal nanowires have good conductivity, they are often used to prepare conductive films, but they are limited by problems such as high production costs, insufficient hardness of pure metals, and easy oxidation.

Method used

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  • A kind of graphene flexible high-conductivity thin film with sandwich structure and its preparation method and application
  • A kind of graphene flexible high-conductivity thin film with sandwich structure and its preparation method and application
  • A kind of graphene flexible high-conductivity thin film with sandwich structure and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] a. Preparation of GO film by suction filtration method: prepare a graphene oxide / ethanol solution with a concentration of 0.1 mg / mL, take 100 mL and place it in a vacuum filtration device (filter membrane is 0.22 μm, Celgard 2400), and continue suction filtration for 10 h, After natural drying, the GO film with a diameter of 4 cm was peeled off from the filter paper.

[0018] b. Cut the GO film into small square pieces of 1.5cmⅹ1.5cm, and put the GO film into the pressure groove of the hot press for the reduction of graphene oxide (the temperature is 150°C, and the time is 900s).

[0019] c. Take out the film, apply 1mL HI on the surface of graphene after natural cooling, and leave it at room temperature for 24h.

[0020] d. Place the film in a digital four-probe square resistance measuring instrument, randomly select 3 areas, and measure four sets of data for each area.

[0021]

Embodiment 2

[0023] a. Preparation of GO film by suction filtration method: prepare a graphene oxide / ethanol solution with a concentration of 0.1 mg / mL, take 100 mL and place it in a vacuum filtration device (filter membrane is 0.22 μm, Celgard 2400), and continue suction filtration for 10 h, After natural drying, the GO film with a diameter of 4 cm was peeled off from the filter paper.

[0024] b. Preparation of AgNWs / PP film by suction filtration method: Prepare AgNWs / PP ethanol solution with a concentration of 0.1 mg / mL, take 10 mL and place it in a vacuum filtration device (filter membrane: 0.22 μm, Celgard 2400), and continue suction filtration for 2 hours , to dry naturally.

[0025] c. Cut the above two types of films into small square pieces of 1.5cmⅹ1.5cm, cover the GO film on the AgNWs / PP film, and put it into the pressure groove of the hot press for the reduction of graphene oxide and the compounding of the sandwich structure (temperature is 150°C, and the time is 900s).

[00...

Embodiment 3

[0030] a. Preparation of GO film by suction filtration method: prepare a graphene oxide / ethanol solution with a concentration of 0.1 mg / mL, take 100 mL and place it in a vacuum filtration device (filter membrane is 0.22 μm, Celgard 2400), and continue suction filtration for 10 h, After natural drying, the GO film with a diameter of 4 cm was peeled off from the filter paper.

[0031] b. Preparation of AgNWs / PP film by suction filtration method: Prepare AgNWs / PP ethanol solution with a concentration of 0.1mg / mL, take 25mL and place it in a vacuum filtration device (filter membrane: 0.22μm, Celgard 2400), and continue suction filtration for 2h , to dry naturally.

[0032] c. Cut the above two types of films into small square pieces of 1.5cmⅹ1.5cm, cover the GO film on the AgNWs / PP film, and put it into the pressure groove of the hot press for the reduction of graphene oxide and the compounding of the sandwich structure (temperature is 150°C, and the time is 900s).

[0033] d. T...

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Abstract

The invention relates to a graphene flexible high-conductivity film with a sandwich structure and a preparation method and an application thereof. The method comprises steps that ethanol solution of graphene oxide is prepared, placed in a vacuum suction filtration device with a filter film and dried by suction filtration, and a GO film is stripped off from a filter paper; silver nanowire ethanol solution is prepared, placed in the vacuum suction filtration device with the filter film and dried by suction filtration to obtain an AgNWs / PP film; the above two types of films are cut into pieces, the GO film is coated on the AgNWs / PP film, reduction of the graphene oxide and composite of the sandwich structure are performed in a pressing tank of a hot pressing machine; the composite film is taken out, after natural cooling, HI is applied to a surface of the graphene, and room temperature standing is performed.

Description

technical field [0001] The invention belongs to the preparation technology of conductive films, in particular to a graphene flexible high-conductivity film with a sandwich structure and its preparation method and application. Background technique [0002] Existing technology: Graphene is an inexpensive carbon material. Because of its special two-dimensional surface structure and excellent electrical conductivity, people began to apply it in the preparation of flexible conductive films. The preparation of graphene by oxidation-reduction method is simple and has a large yield, but its electrical conductivity is poor. In addition, high temperature (above 500°C) or addition of toxic reducing agents are always required in the reduction process of graphene oxide (GO). energy and cause harm to the environment, how to reduce graphite oxide in an energy-saving and green way and improve its electrical conductivity has become an urgent problem to be solved. On the other hand, because ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B13/00F21V23/06
CPCF21V23/06H01B5/14H01B13/0026
Inventor 代云茜宋承堃孟祥钰杨剑辉孙岳明
Owner SOUTHEAST UNIV