Substrate and epitaxial wafer

Abstract

The invention relates to the technical field of a semiconductor and particularly relates to a substrate and an epitaxial wafer. The substrate includes a wafer, wherein the wafer includes preset atoms,concentration of the preset atoms is 1e11-1e18cm<-3>, and the predetermined atoms are at least one type of iron atoms, carbon atoms or silicon atoms. The substrate is advantaged in that the atoms areinjected onto the conductive wafer, the formed substrate not only does not affect a conductivity type and doping concentration of the substrate itself, nor does it affect a conductivity type and doping concentration of a subsequent epitaxial layer, the implanted atoms can diffuse into an epitaxial material during epitaxy, carbon vacancies in the epitaxial material can be filled, deep level defects are reduced, the minority carrier lifetime is improved, the substrate is formed by injecting the carbon atoms and the iron atoms or mixed iron and carbon atoms onto a semi-insulating wafer, upon growth, the implanted atoms diffuse into a GaN buffer layer to form a high resistance GaN buffer layer, and guarantee and foundation are provided for growing high frequency and high power GaN epitaxial materials.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a substrate and an epitaxial wafer. Background technique [0002] The third-generation semiconductor materials represented by GaN and SiC have the advantages of large band gap, high breakdown electric field, high electron saturation drift velocity, strong radiation resistance, etc., which not only solve the problem of white light lighting, but also are suitable for the development of High-temperature, high-power devices and various electronic devices working in special environments, their excellent performance can meet the requirements of modern electronic technology for high temperature, high frequency, high power and radiation resistance. [0003] High-frequency and high-power GaN epitaxial materials need to grow a GaN buffer layer first, then grow a layer of AlGaN, and finally form a GaN HEMT epitaxial material, but in order to form a high-resistance GaN buffer layer, i...

AI Technical Summary

Problems solved by technology

[0004] Silicon carbide epitaxial materials will form carbon vacancy point defects during the homoepitaxial process, and introduce deep energy level defects. This deep energy level defect will become the recombination center of carriers, causing the carrier lifetime to be too short

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