Quantum dot ink and electroluminescence device
A quantum dot and ink technology, applied in the field of quantum dot inks and electroluminescent devices, can solve the problems of easy occurrence of coffee rings, uneven film surface, harsh conditions, etc., and achieves suppression of coffee ring phenomenon, uniform film formation, and film surface smooth effect
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Embodiment 1
[0030] A quantum dot ink, comprising: 3wt% red light CdSe / ZnS quantum dots, 37wt% cyclohexyl acetate (boiling point is 173.5 ℃, surface tension is 30.6mN / m), 60wt% linalool (boiling point is 198°C, the surface tension is 28.2mN / m). The above-mentioned quantum dot ink can be prepared by simple mechanical stirring and mixing of various components.
[0031] The above-mentioned CdSe / ZnS quantum dot ink is used to prepare the light-emitting layer of the red photoluminescent device. The specific preparation process of the device is as follows:
[0032] Provide ITO glass substrate as anode;
[0033] Deposit PEDOT:PSS material on the ITO anode layer, and form a hole injection layer after drying;
[0034] Then deposit PVK material on the hole injection layer, and form the hole transport layer after drying;
[0035] On the PVK hole transport layer, the CdSe / ZnS quantum dot ink in Example 1 was inkjet printed, the process was smooth, and the ink droplets were naturally dried in the at...
Embodiment 2
[0040]A quantum dot ink, comprising: 3wt% red light CdZnSeS / ZnS quantum dots, 57wt% cyclohexyl methacrylate (boiling point is 210 ℃, surface tension is 30.5mN / m), 21wt% citronellol ( The boiling point is 224.5° C., the surface tension is 28.5 mN / m), and 19 wt % cyclohexanone (the boiling point is 155° C., the surface tension is 34.5 mN / m). The above-mentioned quantum dot ink can be prepared by simple mechanical stirring and mixing of various components.
[0041] The above-mentioned CdZnSeS / ZnS quantum dot ink is used to prepare the light-emitting layer of the red photoluminescent device. The specific preparation process of the device is as follows:
[0042] Provide ITO glass substrate as anode;
[0043] Deposit PEDOT:PSS material on the ITO anode layer, and form a hole injection layer after drying;
[0044] Then deposit PVK material on the hole injection layer, and form the hole transport layer after drying;
[0045] On the PVK hole transport layer, the CdZnSeS / ZnS quantum ...
Embodiment 3
[0050] A quantum dot ink, comprising: 2wt% green light CdSeS / ZnS quantum dots, 63wt% isobornyl acetate (boiling point is 220 ℃, surface tension is 33.3mN / m), 20wt% citronellol (boiling point is 224.5°C, surface tension 28.5mN / m), 15wt% cyclohexanone (boiling point 155°C, surface tension 34.5mN / m). The above-mentioned quantum dot ink can be prepared by simple mechanical stirring and mixing of various components.
[0051] The above-mentioned CdSeS / ZnS quantum dot ink is used to prepare the light-emitting layer of the green photoluminescent device. The specific preparation process of the device is as follows:
[0052] Provide ITO glass substrate as anode;
[0053] Deposit PEDOT:PSS material on the ITO anode layer, and form a hole injection layer after drying;
[0054] Then deposit PVK material on the hole injection layer, and form the hole transport layer after drying;
[0055] On the PVK hole transport layer, the CdSeS / ZnS quantum dot ink in Example 3 was inkjet printed, the ...
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