Quantum dot ink and electroluminescence device
A quantum dot and ink technology, applied in the field of quantum dot inks and electroluminescent devices, can solve the problems of easy occurrence of coffee rings, uneven film surface, harsh conditions, etc., and achieves suppression of coffee ring phenomenon, uniform film formation, and film surface smooth effect
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[0029] Example 1
[0030] A quantum dot ink comprising: 3wt% of red light CdSe / ZnS quantum dots, 37wt% of cyclohexyl acetate (boiling point of 173.5℃, surface tension of 30.6mN / m), 60wt% of linalool (boiling point of At 198°C, the surface tension is 28.2mN / m). The above quantum dot ink can be prepared by simple mechanical stirring and mixing of various components.
[0031] Using the above CdSe / ZnS quantum dot ink to prepare the light-emitting layer of the red photoluminescence device, the specific preparation process of the device is as follows:
[0032] Provide ITO glass substrate as anode;
[0033] Deposit PEDOT:PSS material on the ITO anode layer, and form a hole injection layer after drying;
[0034] Then deposit PVK material on the hole injection layer, and dry to form a hole transport layer;
[0035] On the PVK hole transport layer, ink-jet printing the CdSe / ZnS quantum dot ink in Example 1, the process is smooth, the ink droplets are naturally dried in the atmosphere, the film i...
Example Embodiment
[0039] Example 2
[0040] A quantum dot ink, comprising: 3wt% of red light CdZnSeS / ZnS quantum dots, 57wt% of cyclohexyl methacrylate (boiling point 210℃, surface tension of 30.5mN / m), 21wt% citronellol ( Boiling point is 224.5°C, surface tension is 28.5mN / m), 19wt% cyclohexanone (boiling point is 155°C, surface tension is 34.5mN / m). The above quantum dot ink can be prepared by simple mechanical stirring and mixing of various components.
[0041] Using the above CdZnSeS / ZnS quantum dot ink to prepare the light-emitting layer of the red photoluminescence device, the specific preparation process of the device is as follows:
[0042] Provide ITO glass substrate as anode;
[0043] Deposit PEDOT:PSS material on the ITO anode layer, and form a hole injection layer after drying;
[0044] Then deposit PVK material on the hole injection layer, and dry to form a hole transport layer;
[0045] On the PVK hole transport layer, inkjet printing the CdZnSeS / ZnS quantum dot ink in Example 2 has a smoo...
Example Embodiment
[0049] Example 3
[0050] A quantum dot ink comprising: 2wt% green CdSeS / ZnS quantum dots, 63wt% isobornyl acetate (boiling point 220℃, surface tension 33.3mN / m), 20wt% citronellol (boiling point is 224.5°C, surface tension of 28.5mN / m), 15wt% cyclohexanone (boiling point of 155°C, surface tension of 34.5mN / m). The above quantum dot ink can be prepared by simple mechanical stirring and mixing of various components.
[0051] The above-mentioned CdSeS / ZnS quantum dot ink is used to prepare the light-emitting layer of the green photoluminescence device. The specific preparation process of the device is as follows:
[0052] Provide ITO glass substrate as anode;
[0053] Deposit PEDOT:PSS material on the ITO anode layer, and form a hole injection layer after drying;
[0054] Then deposit PVK material on the hole injection layer, and dry to form a hole transport layer;
[0055] On the PVK hole transport layer, inkjet printing the CdSeS / ZnS quantum dot ink in Example 3, the process is smooth,...
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