Quantum dot ink and electroluminescence device

A quantum dot and ink technology, applied in the field of quantum dot inks and electroluminescent devices, can solve the problems of easy occurrence of coffee rings, uneven film surface, harsh conditions, etc., and achieves suppression of coffee ring phenomenon, uniform film formation, and film surface smooth effect

Active Publication Date: 2019-08-27
SUZHOU XINGSHUO NANOTECH CO LTD
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the drying of existing quantum dot inks often needs to be carried out in a vacuum environment, the con

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0029] Example 1

[0030] A quantum dot ink comprising: 3wt% of red light CdSe / ZnS quantum dots, 37wt% of cyclohexyl acetate (boiling point of 173.5℃, surface tension of 30.6mN / m), 60wt% of linalool (boiling point of At 198°C, the surface tension is 28.2mN / m). The above quantum dot ink can be prepared by simple mechanical stirring and mixing of various components.

[0031] Using the above CdSe / ZnS quantum dot ink to prepare the light-emitting layer of the red photoluminescence device, the specific preparation process of the device is as follows:

[0032] Provide ITO glass substrate as anode;

[0033] Deposit PEDOT:PSS material on the ITO anode layer, and form a hole injection layer after drying;

[0034] Then deposit PVK material on the hole injection layer, and dry to form a hole transport layer;

[0035] On the PVK hole transport layer, ink-jet printing the CdSe / ZnS quantum dot ink in Example 1, the process is smooth, the ink droplets are naturally dried in the atmosphere, the film i...

Example Embodiment

[0039] Example 2

[0040] A quantum dot ink, comprising: 3wt% of red light CdZnSeS / ZnS quantum dots, 57wt% of cyclohexyl methacrylate (boiling point 210℃, surface tension of 30.5mN / m), 21wt% citronellol ( Boiling point is 224.5°C, surface tension is 28.5mN / m), 19wt% cyclohexanone (boiling point is 155°C, surface tension is 34.5mN / m). The above quantum dot ink can be prepared by simple mechanical stirring and mixing of various components.

[0041] Using the above CdZnSeS / ZnS quantum dot ink to prepare the light-emitting layer of the red photoluminescence device, the specific preparation process of the device is as follows:

[0042] Provide ITO glass substrate as anode;

[0043] Deposit PEDOT:PSS material on the ITO anode layer, and form a hole injection layer after drying;

[0044] Then deposit PVK material on the hole injection layer, and dry to form a hole transport layer;

[0045] On the PVK hole transport layer, inkjet printing the CdZnSeS / ZnS quantum dot ink in Example 2 has a smoo...

Example Embodiment

[0049] Example 3

[0050] A quantum dot ink comprising: 2wt% green CdSeS / ZnS quantum dots, 63wt% isobornyl acetate (boiling point 220℃, surface tension 33.3mN / m), 20wt% citronellol (boiling point is 224.5°C, surface tension of 28.5mN / m), 15wt% cyclohexanone (boiling point of 155°C, surface tension of 34.5mN / m). The above quantum dot ink can be prepared by simple mechanical stirring and mixing of various components.

[0051] The above-mentioned CdSeS / ZnS quantum dot ink is used to prepare the light-emitting layer of the green photoluminescence device. The specific preparation process of the device is as follows:

[0052] Provide ITO glass substrate as anode;

[0053] Deposit PEDOT:PSS material on the ITO anode layer, and form a hole injection layer after drying;

[0054] Then deposit PVK material on the hole injection layer, and dry to form a hole transport layer;

[0055] On the PVK hole transport layer, inkjet printing the CdSeS / ZnS quantum dot ink in Example 3, the process is smooth,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Boiling pointaaaaaaaaaa
Surface tensionaaaaaaaaaa
Boiling pointaaaaaaaaaa
Login to view more

Abstract

The invention discloses a quantum dot ink and an electroluminescence device. The quantum dot ink comprises quantum dots and a mixed solvent, the mixed solvent comprises a first solvent and a second solvent, the surface tension of the mixed solvent is 25-35 mN/m, and the difference value of the surface tension of the first solvent and the second solvent is within 0.5-3 mN/m. By selecting solvents different in surface tension, ink droplets can be quickly and naturally dried into a film in an atmospheric environment, film formation is even, the film face is flat, and the phenomenon of a coffee ring is effectively inhibited.

Description

technical field [0001] The application belongs to the technical field of quantum dot luminescence, and in particular relates to a quantum dot ink and an electroluminescence device. Background technique [0002] Quantum dot materials have broad application prospects in the fields of display and lighting due to their excellent properties such as wide excitation spectrum, narrow emission spectrum, adjustable emission color with size, high color purity, and high light conversion efficiency. By applying a certain electric field or light excitation, the quantum dot material will emit light of a specific frequency, so it has been widely used in optoelectronic devices such as quantum dot light-emitting diodes. [0003] For quantum dot light-emitting diodes, quantum dot materials are generally dispersed in ink, and a quantum dot film is prepared by deposition. However, the drying of existing quantum dot inks often needs to be carried out in a vacuum environment, the conditions are r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09D11/30H01L51/50
CPCC09D11/30H10K50/115
Inventor 王思元温明月王允军
Owner SUZHOU XINGSHUO NANOTECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products