A method of improving the insulation resistance value of chip capacitor

Abstract

The invention discloses a method for improving the insulation resistance value of a chip capacitor, which includes: loading a constant voltage on the chip capacitor; heating up to a preset temperature in an annealing furnace and keeping it for a preset time; placing the chip capacitor in liquid nitrogen Cool for 1-3 minutes; then take out the chip capacitor and let it rise to room temperature naturally in the air. This method utilizes the characteristic that the insulation resistance value of the STO chip capacitor increases continuously with the load voltage and time, and performs rapid heat treatment on the chip capacitor under the condition of the loaded voltage. This method is simple and easy to implement. Without changing the capacitance value, loss and capacitance temperature coefficient of the capacitor, the insulation resistance value and consistency of the STO ceramic chip are greatly improved. After removing the applied voltage and thermal conditions, the STO chip capacitor is insulated The resistance value does not decay over time.

Description

technical field [0001] The invention relates to the field of electronic information functional materials and devices, in particular to a method for increasing the insulation resistance value of a chip capacitor. Background technique [0002] Chip capacitors, also known as single-layer chip capacitors, were invented by American DLI and MDI companies in the 1970s. Due to their small size, large dielectric constant, wide application temperature range (-55°C ~ 125°C), and capacitance temperature stability High (≤±4.7%~≤±22%) and good frequency characteristics, etc., are widely used in microwave integration technology and microwave circuits. According to statistics, the global microwave components market in 2017 exceeded US$18 billion, of which chip capacitors accounted for about 25% of the market. Chip capacitors (single-layer grain boundary layer capacitors) generally use SrTiO 3 (STO) or electron-doped STO is used as the parent phase, which is made by one-step or two-step me...

AI Technical Summary

Problems solved by technology

[0009] On the other hand, acceptor ions and vitrified (or insulating) substances in the grain boundary layer enter the grain boundary through thermal diffusion, but this process is extremely difficult to control precisely in technology, so in actual products, the insulation resistance value of the capacitor There are often large differences and poor consistency, which affects the stability of product use

In summary, there is no effective way to increase the insulation resistance and consistency of STO chip capacitors without reducing their capacitance, and this problem needs to be solved urgently.

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