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Polycrystalline silicon solar cell light absorption enhanced structure, polycrystalline silicon solar cell and preparation method thereof

A technology of solar cells and enhanced structure, applied in circuits, electrical components, photovoltaic power generation, etc., to achieve the effects of good stability, low cost, and improved light capture capability

Active Publication Date: 2021-05-28
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, on the surface of the textured battery, especially on the micron-scale textured structure of polysilicon, and there is no effective nano-enhanced technical solution under the condition of an anti-reflection film

Method used

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  • Polycrystalline silicon solar cell light absorption enhanced structure, polycrystalline silicon solar cell and preparation method thereof
  • Polycrystalline silicon solar cell light absorption enhanced structure, polycrystalline silicon solar cell and preparation method thereof

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Embodiment Construction

[0025] The present invention will be described in further detail below.

[0026] The polycrystalline silicon solar cell structure integrated with the light absorption enhancing structure of the present invention such as figure 1 As shown, the polysilicon solar cell light absorption enhancement structure includes a polysilicon textured structure, a dielectric nano-film, and a nano-dielectric pellet stacked in sequence. The dielectric nano-film is located on the textured side of the polysilicon textured structure as an anti-reflection film. It can be seen from the figure that a single layer of medium nanospheres is distributed on the surface of the medium nanofilm. The medium nanospheres are polystyrene or silica spheres. The diameter of the medium nanospheres is 100nm to 900nm. The refractive index in the solar spectrum range is 1.4-2.0, and it can forward-scatter sunlight in a wide spectral range, enhance the light capture of the battery, and does not depend on the base materi...

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Abstract

The invention relates to a polycrystalline silicon solar cell light absorption enhancement structure, a polycrystalline silicon solar cell and a preparation method thereof. The light absorption enhancement structure includes a polycrystalline silicon textured structure, a dielectric nano film and a dielectric nano ball that are sequentially stacked, wherein the dielectric nano The thin film is located on the textured side of the polysilicon textured structure, and the medium nano ball monolayer is distributed on the surface of the medium nano film. The dielectric nanospheres are not sensitive to the angle of incident light, and can forward-scatter sunlight in a wide spectral range, enhancing the light capture of the battery, and the combination of the dielectric nanospheres and the dielectric nanofilm makes up for the existing There is a disadvantage of weak light-harvesting ability of micron-scale textured structure technology. In addition, the single-layer dielectric nanosphere integration method of the present invention is simple, has good compatibility with the existing polysilicon textured technology, and can effectively improve the efficiency of polysilicon solar cells.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a polycrystalline silicon solar cell light absorption enhancement structure, a polycrystalline silicon solar cell and a preparation method thereof. Background technique [0002] As a major photovoltaic technology, crystalline silicon solar cells have an extremely important position and many extensive application scenarios, such as power supply for residential buildings, solar power stations, power supply for street lamps, self-driven displays and so on. Crystalline silicon materials are divided into monocrystalline silicon and polycrystalline silicon, among which polycrystalline silicon occupies a dominant position in the photovoltaic market due to its low manufacturing cost and high cost performance. However, due to the different crystal orientations on the surface of polycrystalline silicon cells, it is difficult to use an alkaline chemical solution etching method to achi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0236B82Y40/00
CPCB82Y40/00H01L31/02168H01L31/02363Y02E10/50
Inventor 张轶楠李向平
Owner JINAN UNIVERSITY
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