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Cu-Ni ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR

A sputtering target, cu-ni technology, which is applied in sputtering coating, metal material coating process, vacuum evaporation coating and other directions, can solve the problems of inability to form a film, cannot form a Cu alloy film well, etc., and achieves weather resistance. The effect of improved performance, suppression of micro-arc discharge, and excellent weather resistance

Inactive Publication Date: 2019-09-03
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, recently, the size of the glass substrate on which the wiring film is formed is increasing, and accordingly, the sputtering target itself for forming the protective film tends to become larger.
However, when the size of the conventional Cu alloy sputtering target described in Patent Document 1 is increased, there is a problem that microarc discharge (abnormal discharge) and spatter are generated depending on the sputtering conditions, and film formation cannot be performed satisfactorily.
That is, when a large sputtering target is used, since a large power is input, pores are generated on the sputtering surface of the sputtering target, or if there are inclusions such as oxides, micro-arc discharges are likely to occur, and the sputtering target is partially damaged. Particles are generated due to permanent melting, and Cu alloy film may not be formed well

Method used

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  • Cu-Ni ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
  • Cu-Ni ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0077] Hereinafter, the result of the evaluation test which evaluated the operation effect of the Cu-Ni alloy sputtering target concerning this invention is demonstrated.

[0078] [Invention Examples 1-7, Comparative Examples 1-4]

[0079] (1) Hydrogen reduction treatment of electrolytic Ni (manufacture of hydrogen reduction Ni ingot)

[0080] Electrolytic Ni (purity: 99.99% by mass or more) was prepared. The hydrogen content in electrolytic Ni is in the range of 11 mass ppm to 15 mass ppm.

[0081]Electrolyzed Ni was put into an alumina crucible. Next, the electrolytic Ni is heated in a vacuum atmosphere using a high-frequency induction heating furnace to melt it, and after keeping it at a temperature 10° C. to 50° C. higher than the melting temperature of Ni for 2 minutes to 15 minutes, it is cooled and A hydrogen-reduced Ni ingot was obtained by solidification. Table 1 shows the melting retention time during the hydrogen reduction treatment and the hydrogen content of t...

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Abstract

A Cu-Ni alloy sputtering target has a composition such that: Ni is contained in the range of 16 mass% to 55 mass%; the hydrogen content is less than 5 mass ppm, the oxygen content is 500 mass ppm or less, and the carbon content is 500 mass ppm or less; and the balance is Cu and unavoidable impurities. The number of voids with a maximum diameter of at least 2 [mu]m is not more than 1 per 1 mm2 region in the sputtering surface.

Description

technical field [0001] The invention relates to a Cu-Ni alloy sputtering target and a manufacturing method thereof. [0002] This application claims priority based on Patent Application No. 2017-042162 filed in Japan on March 6, 2017 and Patent Application No. 2017-241103 filed in Japan on December 15, 2017, and the contents thereof are incorporated herein. Background technique [0003] Conventionally, Al has been widely used as wiring films for flat panel displays such as liquid crystal and organic EL panels, and touch panels. Recently, the miniaturization (narrow width) and thinning of the wiring film are being pursued, and the specific resistance of the wiring film is lower than that of the conventional wiring film. Along with the miniaturization and thinning of the above-mentioned wiring film, a wiring film using Cu or a Cu alloy, which is a material having a specific resistance lower than that of Al, is provided. [0004] However, a Cu wiring film made of Cu or a Cu a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22C19/03C22F1/00C22F1/10C22C9/06
Inventor 小见山昌三
Owner MITSUBISHI MATERIALS CORP