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Multilayer graphene and preparation method thereof

A multi-layer graphene, graphene technology, applied in the coating, metal material coating process, gaseous chemical plating and other directions, can solve the problems of inability to prepare multi-layer graphene in large quantities, difficult to guarantee the quality, etc., and achieve good industrialization Prospects, to achieve the effect of enlarged production

Active Publication Date: 2019-09-06
BEIJING GRAPHENE INST +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] A main purpose of the present invention is to overcome at least one defect of the above-mentioned prior art, provide a kind of multilayer graphene and preparation method thereof, to solve the problem that the existing method cannot prepare multilayer graphene in large quantities and the quality is difficult to guarantee

Method used

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  • Multilayer graphene and preparation method thereof
  • Multilayer graphene and preparation method thereof
  • Multilayer graphene and preparation method thereof

Examples

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Effect test

preparation example Construction

[0043] figure 1 Representatively shows a flow chart of the preparation process of multi-layer graphene according to an exemplary embodiment of the present invention. figure 2 show figure 1 schematic diagram of the device. combine figure 1 and figure 2 As shown, in the present embodiment, the preparation method of the multilayer graphene provided by the invention comprises steps as follows:

[0044] A copper foil 100 is provided, wherein the thickness of the copper foil 100 can generally be 15 μm˜250 μm, but the invention is not limited thereto. In some embodiments, the copper foil may be electrochemically polished in advance to make the surface of the copper foil more smooth. Specifically, for example, a phosphoric acid: ethylene glycol solution with a volume ratio of 3:1 is used as the polishing solution, the negative pole is copper plate, the positive pole is copper foil, and the electrochemical polishing process is performed at a voltage of 1.5-2.0V for about 20-30 m...

Embodiment 1

[0055] Embodiment 1: the preparation of multilayer graphene in 1 inch pipe diameter CVD system

[0056] Step (1): Electrochemical polishing is performed on copper foil with a thickness of 25 μm. Among them, phosphoric acid: ethylene glycol solution with a volume ratio of 3:1 is used as the polishing liquid, the negative pole is graphite plate, the positive pole is copper foil, the voltage is 1.5-2.0V, and the polishing time is 20-30min.

[0057] Step (2): Attach the electrochemically polished copper foil to the quartz plate, and then place it in the CVD system. The gap between the copper foil and the quartz plate is as follows: Figure 12 As shown, it is about 5 μm. Under this condition, the gas flow on the lower surface of the copper foil during the growth process is a molecular flow, and the gas flow on the upper surface of the copper foil is a laminar flow.

[0058] Step (3): Increase the temperature in the tube furnace to 1000°C within 1 hour, then maintain the temperatu...

Embodiment 2

[0061] Embodiment 2: Preparation of multilayer graphene on copper foil in 2-inch pipe diameter CVD system

[0062] Step (1): same as Example 1;

[0063] Step (2): The electrochemically polished copper foil is attached to a quartz plate, and placed in a CVD system with a pipe diameter of 2 inches, and the others are the same as in Example 1;

[0064] Step (3): same as Example 1;

[0065] Step (4): Pass 4000sccm H 2 and 4 sccm CH 4 , keep the pressure at 4kPa, and grow for 2 hours.

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Abstract

The invention provides multilayer graphene and a preparation method thereof. The preparation method comprises the following steps: a copper foil is provided; the copper foil is bonded on a substrate;the copper foil on the substrate is bonded after annealing; and graphene is grown on the surface of the copper foil after annealing through chemical vapor deposition to obtain the multilayer graphene,wherein a gap is formed between the copper foil and the substrate, and is smaller than 10 microns. Through pretreatment of the copper foil, when the chemical vapor deposition is performed on the copper foil, different airflow layers can be formed on the upper and lower surfaces of the copper foil, so that the continuous catalysis of carbon sources is realized, and the high-quality multilayer graphene is finally obtained. In addition, the method is not limited by the size, can realize the amplification production of the multilayer graphene, and achieves excellent industrialization prospect.

Description

technical field [0001] The invention relates to the field of graphene materials, in particular to multilayer graphene and a preparation method thereof. Background technique [0002] Graphene, as an emerging two-dimensional material, has received extensive attention due to its excellent physical and chemical properties. However, single-layer graphene is difficult to open the band gap, which limits its application in the field of electronic devices. Graphene with double or more double layers can open a band gap under an applied electric field, and the band gap is tunable. Therefore, multilayer graphene has more development prospects in terms of electrical, optical, and mechanical properties, and has great potential practical value in the fields of electronic devices, transparent conductive films, and photoelectric detection. [0003] Among the many preparation methods of graphene, the chemical vapor deposition method (CVD) has many advantages such as high-quality grown graph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/455C23C16/02
CPCC23C16/0209C23C16/26C23C16/45502C23C16/45504
Inventor 彭海琳王雅妮邓兵刘忠范
Owner BEIJING GRAPHENE INST
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