Manufacturing method of top-emitting indium gallium zinc oxide thin film transistor device
A device manufacturing method and indium gallium zinc oxide technology are applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., which can solve the problems of low channel current density, unfavorable cost reduction and yield improvement, etc. The effect of large channel current density, improved production efficiency, and simplified complexity
Active Publication Date: 2019-09-06
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF10 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0006] In view of this, the present invention provides a method for manufacturing a top-emission type indium gallium zinc oxide thin film transistor device, which solves the problem of top-emission gate indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO) thin film transistor ( Thin Film Transistor, TFT) device gate and source / drain need to use three photomasks, which is not conducive to cost reduction and yield improvement, and the gate insulating layer is usually made of silicon oxide, resulting in low channel current density minor technical issues
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0039] Please refer to Figure 1A and 1B , The method for manufacturing a light-emitting indium gallium zinc oxide thin film transistor device of the present invention includes: a first photolithography step S01, a second photolithography step S02, a gate insulating layer forming step S03, a third photolithography step S04, and source via hole formation Step S05, InGaZnO active layer exposing step S06, source / drain forming step S07, planarization layer forming step S08, fourth photolithography step S09, fifth photolithography step S10, and sixth photolithography step S11.
[0040] Please refer to figure 2 , the first photolithography step (Photo Engraving Process, PEP) (using the first photomask) S01, including depositing the first metal layer 20 on the glass substrate 10, and patterning the first metal layer 20 to be in the The light shielding layer LS and the source layer S are formed on the first metal layer 20 .
[0041] Please refer to image 3 , the second photolith...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a manufacturing method of a top-emitting indium gallium zinc oxide thin film transistor device. The manufacturing method comprises a first photolithographic step, a second photolithographic step, a gate insulating layer forming step, a third photolithographic step, a source via forming step, an indium gallium zinc oxide active layer exposing step, a source / drain forming step, a planarization layer forming step, a fourth photolithographic step, a fifth photolithographic step and a sixth photolithographic step. The polyimide electrode barrier isolation column is applied to prepare the gate electrode and the source / drain electrode, and the source / drain electrode and the gate electrode can be directly formed through the electrode barrier isolation column so that the three photomasks are reduced to one photomask, and the polyimide is used as the gate insulating layer to increase the channel current density, thereby simplifying the complexity of the manufacturing method and improving the production efficiency.
Description
technical field [0001] The invention relates to a method for manufacturing a top-emission type indium gallium zinc oxide thin film transistor device, which adopts a polyimide (Polyimide, PI) electrode barrier wall isolation column to prepare a gate and a source / drain electrode, and directly passes through the PI electrode barrier wall isolation column The source / drain and the gate can be formed, so that three photomasks are reduced to one. At the same time, PI as the gate insulating layer can increase the channel current density, thereby simplifying the complexity of the manufacturing method and improving production efficiency. Background technique [0002] Currently, Active Matrix Liquid Crystal Display (AMLCD) and Active Matrix Organic Light Emitting Diode (AMOLED) displays use amorphous indium gallium zinc oxide (Indium Gallium Zinc Oxide) , IGZO) is a representative metal oxide thin film transistor (Thin Film Transistor, TFT) device, which has significant advantages such...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1225H01L27/1259H01L27/1288H10K59/1201H01L21/02565H01L29/66742H01L29/7869
Inventor 罗延欢
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD