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Cu3Sb(S,Se)4 thin film, preparation method and application thereof

A film and solution technology, applied in the field of solar energy materials and preparation, to avoid chemicals or reagents, good application prospects, and improve photoelectric performance.

Active Publication Date: 2019-09-06
JINLING INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current preparation methods are difficult to prepare thin film materials with adjustable bandgap, which limits its application.

Method used

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  • Cu3Sb(S,Se)4 thin film, preparation method and application thereof
  • Cu3Sb(S,Se)4 thin film, preparation method and application thereof
  • Cu3Sb(S,Se)4 thin film, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039]Weigh 0.02M copper acetate, 0.03M antimony chloride, and 0.1M thiourea and dissolve them in 5 mL of ethylene glycol methyl ether respectively, and after fully dissolving, obtain solution A, solution B, and solution C; first add solution B to the solution In A, after mixing evenly, it is then mixed with solution C at a volume ratio of 2:1, and finally a yellow-green clear and transparent copper-antimony-sulfur source precursor solution is obtained. The precursor solution was spin-coated on a quartz glass substrate, dried at 300° C. for 2 min, and the substrate was removed and cooled to room temperature, and the above steps were repeated 19 times to obtain a copper-antimony-sulfur source film.

[0040] like figure 1 Shown is a double-temperature zone selenization annealing treatment using a semi-closed space. Take a bottom-sealed quartz tube, place the selenium particles at the bottom of the tube, place the sample in the middle of the tube, and plug one end of the quartz t...

Embodiment 2

[0044] The temperature of the selenium grain zone in this example is 325° C., and other specific steps and process parameters are the same as those in Example 1. The prepared Cu 3 Sb(S, Se) 4 The film and optoelectronic properties are consistent with the results of Example 1.

Embodiment 3

[0046] The temperature of the selenium grain zone in this example is 350° C., and other specific steps and process parameters are the same as those in Example 1. The prepared Cu 3 Sb(S, Se) 4 The film and optoelectronic properties are consistent with the results of Example 1.

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PUM

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Abstract

The invention discloses a Cu3Sb(S,Se)4 thin film, a preparation method and application thereof. Raw materials comprise a copper-containing compound, a stibium-containing compound and a sulfur-containing compound, and after the raw materials are mixed with a solvent for solidification, the Cu3Sb(S,Se)4 thin film is obtained through selenizing treatment. The thin film prepared according to the advantages of a copper antimony sulfur precursor solution is controllable in elements, and the copper antimony sulfur thin film with a controllable band gap in a certain range can be prepared; and the bandgap adjustability of the Cu3Sb(S,Se)4 thin film is realized by using a double-temperature area selenizing technology of a semi-closed space.

Description

technical field [0001] The present invention relates to a kind of solar energy material, preparation method and application, in particular to a kind of Cu 3 Sb(S, Se) 4 Thin film, preparation method and application thereof. Background technique [0002] With the increasingly prominent energy and environmental problems, solar energy as a renewable and clean energy has attracted more and more people's attention, especially solar cells that convert solar energy into electrical energy have become a research hotspot today. High-efficiency, low-cost and flexible solar cell materials are currently being explored by many scholars. At present, crystalline silicon cells occupy a major position in the photovoltaic industry, but the production process of crystalline silicon cells is complicated and the production of flexible cells cannot be realized. Therefore, researchers are currently required to focus on low-cost, high-efficiency thin-film solar cells. In thin film solar cells, C...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/18H01L21/02
CPCH01L21/02422H01L21/02568H01L21/02628H01L21/02664H01L31/032H01L31/1864Y02P70/50
Inventor 王威刘广辉郝凌云林玲刘季锦花孙悦谭琉佳
Owner JINLING INST OF TECH