Translucent perovskite solar cell without auxiliary layer and preparation method thereof
A solar cell and perovskite technology, applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of difficult preparation of auxiliary layers, low repeatability, poor stability, etc., and achieve photoelectric conversion efficiency improvement and stability. Good, improve the effect of device stability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0037] Such asfigure 1 As shown, a translucent perovskite solar cell without an auxiliary layer includes a transparent conductive substrate, an electron transport layer, a perovskite active layer, a hole transport layer and a transparent electrode layer arranged in sequence from bottom to top.
[0038] In this embodiment, the transparent conductive substrate is glass covered with an ITO film, and the material of the electron transport layer is SnO 2 , the perovskite active layer is the perovskite material CH 3 NH 3 PB 3 , the hole transport layer is CuSCN, and the transparent electrode layer is ITO. The specific preparation method is as follows:
[0039] Step 1, cleaning of ITO glass: select the ITO glass with a square resistance of 10Ω, a light transmittance of 90%, and a thickness of 1.1 mm, and ultrasonically clean the ITO conductive glass in deionized water, detergent, acetone, and ethanol solutions for 5 minutes. , and then dry the ITO glass with nitrogen, and treat i...
Embodiment 2
[0046] In this embodiment, the transparent conductive substrate is glass covered with an FTO film, and the material of the electron transport layer is SnO 2 , the perovskite active layer is the perovskite material CH 3 NH 3 PB 3 , the hole transport layer is CuI, and the transparent electrode layer is ITO. The specific preparation method is as follows:
[0047] Step 1, cleaning of FTO glass: select FTO glass with a square resistance of 10Ω, a light transmittance of 90%, and a thickness of 1.1 mm, and ultrasonically clean the FTO conductive glass in deionized water, detergent, acetone, and ethanol solutions for 5 minutes. , and then dry the FTO glass with nitrogen, and treat it with an ultraviolet ozone cleaner for 20 minutes.
[0048] Step 2, electron transport layer SnO 2 Preparation: 20mg of SnCl 2 2H 2 O was dissolved in 1 mL of ethanol solution, and after the dissolution was complete, the solution was spin-coated on the FTO substrate at a rotation speed of 3000 rpm ...
Embodiment 3
[0054] In this embodiment, the transparent conductive substrate is glass covered with an ITO film, the material of the electron transport layer is PCBM, and the perovskite active layer is perovskite material CH(NH 2 ) 2 PB 3 , the hole transport layer is CuSCN, and the transparent electrode layer is ITO. The specific preparation method is as follows:
[0055] Step 1, cleaning of ITO glass: select the ITO glass with a square resistance of 10Ω, a light transmittance of 90%, and a thickness of 1.1 mm, and ultrasonically clean the ITO conductive glass in deionized water, detergent, acetone, and ethanol solutions for 5 minutes. , and then dry the ITO glass with nitrogen, and treat it with an ultraviolet ozone cleaner for 20 minutes.
[0056] Step 2, preparation of electron transport layer PCBM: 20 mg of PCBM was dissolved in 1 mL of chlorobenzene solution, and after the dissolution was complete, the solution was spin-coated on the ITO substrate at a rotation speed of 4000 rpm an...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Resistance | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More - R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com



