Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pulse neuron circuit based on ferroelectric transistor

A ferroelectric transistor and neuron technology, applied in the field of pulsed neuron circuits based on ferroelectric transistors, can solve the problems of high hardware overhead, high circuit energy consumption, loss of power consumption and energy consumption advantages of the network, and achieve energy consumption , the effect of reducing hardware overhead

Active Publication Date: 2019-09-13
PEKING UNIV
View PDF7 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in terms of the hardware implementation of neuromorphic computing, many research institutions and enterprises have developed a variety of neuromorphic chips. Mainly based on traditional CMOS circuit construction, the simulation of pulse neuron functions often relies on circuit modules composed of several MOSFET devices and capacitors, which has problems such as large hardware overhead and high circuit energy consumption, which is not conducive to high-density and large-scale integration. And may make the network lose the original power consumption and energy consumption advantages brought by the architecture level

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pulse neuron circuit based on ferroelectric transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The present invention will be further elaborated below through specific embodiments in conjunction with the accompanying drawings.

[0017] This embodiment uses Hf 0.5 Zr 0.5 o 2 The ferroelectric transistor FeFET of ferroelectric material, at this time, the spontaneous polarization of the ferroelectric material will induce additional charges on the gate oxide layer of the MOSFET, resulting in a change in the channel conductance of the device and a change in the channel current of the device. The charge induced by the ferroelectric polarization charge on the gate oxide layer of the MOSFET can also be equivalent to an additional gate voltage, which can be reflected on the entire FeFET as a change in the threshold voltage of the device.

[0018] Selection of the ferroelectric material Hf between the metal gate electrode and the metal intermediate gate 0.5 Zr 0.5 o 2 The thickness is between 3nm and 10nm, and the annealing temperature is between 400°C and 500°C for hi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a pulse neuron circuit based on a ferroelectric transistor, and belongs to the technical field of pulse neuron in neural morphology calculation. The pulse neuron circuit comprises a ferroelectric transistor FeFET and a resistor, wherein a ferroelectric transistor L-FeFET is formed by enhancing polarization degradation characteristics of ferroelectric materials of the ferroelectric transistor FeFET, and the L-FeFET is used for simulating the accumulation and leakage characteristics of biological neurons, and a voltage pulse signal transmitted from a synapse is applied tothe gate of the L-FeFET; the source end of the L-FeFET is connected with the GND, and the drain end of the L-FeFET is connected to one end of the resistor; and the other end of the resistor is connected with a fixed power supply voltage, and the resistor is used for divides the voltage with the L-FeFET to generate a voltage pulse output of the neurons. Compared with an implementation mode based ona traditional MOSFET, the pulse neuron circuit has the advantages that the hardware expenditure can be obviously reduced, has strong driving capability, and is beneficial to hardware realization of alarge-scale highly interconnected pulse neural network.

Description

technical field [0001] The invention relates to the physical realization of pulse neurons in neuromorphic computing, in particular to a pulse neuron circuit based on ferroelectric transistors. Background technique [0002] With the vigorous development of information technology, human society has entered the era of "data explosion", and the annual exponential growth of data volume has brought unprecedented pressure on data processing and calculation. Due to the characteristics of the traditional von Neumann computing architecture, which separates storage and computing, the transmission of data between the storage unit and the computing unit will cause a lot of waste of power consumption and energy consumption. In today's information society and even the intelligent society, there is a huge amount of data In this context, this problem will become more and more serious. [0003] Inspired by the computing model of the human brain, the researchers proposed a neural network (Neu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06N3/063H03K19/0944
CPCG06N3/063H03K19/0944
Inventor 黄如陈诚刘姝涵黄芊芊
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products