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Laminated inductor and manufacturing method thereof

A manufacturing method and inductor technology, applied in the direction of inductors, circuits, electrical components, etc., can solve the problems of high process cost of laminated inductors, large inductance resistance, etc., to save photomasks and metal deposition processes, reduce resistance, The effect of connecting a low resistance

Active Publication Date: 2021-03-09
福建省福联集成电路有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] Therefore, it is necessary to provide a laminated inductor and a manufacturing method to solve the problems of high process cost and large inductance resistance of existing laminated inductors

Method used

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  • Laminated inductor and manufacturing method thereof
  • Laminated inductor and manufacturing method thereof
  • Laminated inductor and manufacturing method thereof

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Embodiment Construction

[0043] In order to explain in detail the technical content, structural features, achieved goals and effects of the technical solution, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.

[0044] see Figure 1 to Figure 6 , the present embodiment provides a method for fabricating a stacked inductor. This method can be fabricated on a semiconductor device 1. The semiconductor device can be a gallium arsenide epitaxy and a substrate. The semiconductor device includes an active device area and a passive device area. For making transistors (including source, drain and gate), the passive device area is used to make inductors, and the passive device area needs to be insulated before being fabricated to form an insulating region, which is usually formed by ion implantation. The method includes the following steps: firstly, a first photoresist layer is fabricated on the semiconductor device 1, and exposure and development are c...

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Abstract

The invention discloses a laminated inductor and a manufacturing method thereof. The manufacturing method includes the following steps: making a first photoresist layer on a semiconductor device, exposing and developing the source metal, the drain metal, and the bottom metal of the inductor; In the insulating area of ​​the semiconductor device; deposit the source metal, drain metal and inductor bottom metal of the transistor; remove the first photoresist layer, deposit the first protective layer, at the gate position, source metal, drain metal and inductor bottom layer Metal etching openings; making a second photoresist layer, exposing and developing at the gate position, source metal, drain metal and inductor bottom metal; depositing gate metal, source stack metal, drain stack metal and Inductor stacked metal. Compared with the process technology before improvement, this solution saves photomask and metal deposition process, and reduces the internal resistance of the inductor at the same time.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor inductors, in particular to a stacked inductor and a manufacturing method. Background technique [0002] At present, in integrated circuits, the existing HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor) process technology is used as the inductor in the passive device. The general process will first complete the transistor gate, source and drain of the active device, and then Do passive device resistors, capacitors, inductors. According to the manufacturing method of the prior art laminated inductor, it is made of two layers of metal lamination, and the manufacturing process is as follows: [0003] 1. Make the source and drain of the active device HEMT, ohmic contact (Source and drain ohmic contact), referred to as (SDOC). [0004] 2. Make the gate Schottky contact (Gate Schottky Contact) of the active device HEMT (GSC for short). [0005] 3. Make t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/64H01L21/335H01L29/778
CPCH01L28/10H01L29/66462H01L29/778
Inventor 林张鸿林豪詹智梅王潮斌肖俊鹏陈东仰郑育新
Owner 福建省福联集成电路有限公司
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