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Glass wafer polishing method

A technology for glass wafers and wafers, which is applied to polishing compositions containing abrasives, abrasives, metal processing equipment, etc. It can solve the problems of poor uniformity of wafer polishing surface roughness, and achieve the effect of improving uniformity and reducing particle size changes

Inactive Publication Date: 2019-09-17
浙江晶特光学科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The object of the present invention is to provide a kind of glass wafer polishing method, to alleviate the poor technical problem of the homogeneity of wafer polishing surface roughness in the prior art

Method used

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Embodiment 1

[0023] like figure 1 As shown, the glass wafer polishing method provided by the embodiment of the present invention includes the following steps: using a preliminary polishing medium containing cerium oxide particles to carry out preliminary polishing on the wafer; using a damping cloth with pores, and coating the damping cloth containing cerium dioxide A fine polishing media of silicon particles finish polishes the wafer.

[0024] Specifically, the initial polishing medium includes cerium oxide powder or an initial polishing solution containing cerium oxide particles, and the glass wafer is polished and initially polished by a double-sided polishing machine, so that a damaged layer is formed on the surface of the glass wafer due to abrasion. Since more powder is produced on the surface of the glass wafer during the initial polishing process, if the powder is mixed in the initial polishing liquid, the viscosity of the initial polishing liquid will be increased, so it is prefer...

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Abstract

The invention provides a glass wafer polishing method, and relates to the technical field of wafer processing. The glass wafer polishing method provided by the invention comprises the following steps of adopting an initial polishing medium containing cerium oxide particulate matters for initially polishing; and adopting damping cloth with pores, coating a fine polishing medium containing silicon dioxide particulate matters on the damping cloth, and finely polishing. According to the glass wafer polishing method provided by the invention, the technical problem of poor uniformity of wafer polishing surface roughness in the prior art is solved, and the particle size change produced by wear of the silicon dioxide particulate matters can be reduced, so that an arithmetic average value of the wafer surface roughness and a root-mean-square value of the wafer surface roughness can be favorably reduced.

Description

technical field [0001] The invention relates to the technical field of wafer processing, in particular to a glass wafer polishing method. Background technique [0002] In order to make a nanoscale diffraction grating, the roughness of the optical glass wafer is required to reach an ultra-smooth level, that is, the average value of the surface height difference of the optical glass wafer is less than 0.3nm, and the standard deviation of the surface height of the optical glass wafer is less than 0.4nm. In order to improve the level of surface roughness, cerium oxide polishing powder with a central particle size of 1 μm to 2 μm is usually used for initial polishing, and then a cerium oxide polishing liquid with a central particle size of 0.2 μm to 0.5 μm is used for fine polishing to remove damage caused by initial polishing layer to meet the surface roughness requirements. However, cerium oxide with a central particle size of 0.2 μm to 0.5 μm is difficult to screen and proces...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/00B24D11/00B24D11/02C09G1/02
CPCB24B1/00B24D11/00B24D11/02C09G1/02
Inventor 牟光远杨超平
Owner 浙江晶特光学科技有限公司
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